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独立菱面体硼烯纳米片:制备及存储器件应用

Freestanding-rhombohedral borophene nanosheets: preparation and memory device application.

作者信息

Liang Xinchao, Hao Jinqian, Zhang Pengyu, Hou Chuang, Tai Guoan

机构信息

The State Key Laboratory of Mechanics and Control of Mechanical Structures, Laboratory of Intelligent Nano Materials and Devices of Ministry of Education, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China.

出版信息

Nanotechnology. 2022 Sep 26;33(50). doi: 10.1088/1361-6528/ac8f9a.

DOI:10.1088/1361-6528/ac8f9a
PMID:36067735
Abstract

Borophene has attracted extensive interests owing to its distinct structural, electronic and optical properties for promising potential applications. However, the structural instability and need of metal substrate for deposition of borophene seriously restrict the exploration of its exceptional physical and chemical properties and further hamper its extensive applications towards high-performance electronic and optoelectronic devices. Here, we reported the synthesis of high-quality freestanding-rhombohedral borophene nanosheets by a facile probe ultrasonic approach in different organic solvents. The results show that the nanosheets have high-quality in ethanol solution and have an average lateral size of 0.54m and a thickness of around 1.2 nm. Photoluminescence spectra indicate that a strong quantum confinement effect occurs in the nanosheets, which caused the increase of the band gap from 1.80 eV for boron powders and 2.52 eV for the nanosheets s. A nonvolatile memory device based on the nanosheets mixed with polyvinylpyrrolidone was fabricated, which exhibited a good rewriteable nonvolatile memory behavior and good stability.

摘要

由于硼烯独特的结构、电子和光学性质具有潜在的应用前景,因此吸引了广泛的关注。然而,硼烯的结构不稳定性以及在沉积时需要金属衬底,这严重限制了对其优异物理和化学性质的探索,并进一步阻碍了其在高性能电子和光电器件方面的广泛应用。在此,我们报道了通过一种简便的探针超声方法在不同有机溶剂中合成高质量的独立菱形硼烯纳米片。结果表明,这些纳米片在乙醇溶液中质量较高,平均横向尺寸为0.54μm,厚度约为1.2nm。光致发光光谱表明,纳米片中出现了强烈的量子限制效应,这导致带隙从硼粉的1.80eV和纳米片的2.52eV增加。制备了一种基于纳米片与聚乙烯吡咯烷酮混合的非易失性存储器件,该器件表现出良好的可重写非易失性存储行为和良好的稳定性。

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Nanomaterials (Basel). 2025 Feb 26;15(5):362. doi: 10.3390/nano15050362.
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