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黑磷量子点。

Black phosphorus quantum dots.

机构信息

Energy Research Institute @ NTU (ERI@N), Interdisciplinary Graduate School, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore) http://www.ntu.edu.sg/home/hzhang/

出版信息

Angew Chem Int Ed Engl. 2015 Mar 16;54(12):3653-7. doi: 10.1002/anie.201409400. Epub 2015 Feb 3.

DOI:10.1002/anie.201409400
PMID:25649505
Abstract

As a unique two-dimensional nanomaterial, layered black phosphorus (BP) nanosheets have shown promising applications in electronics. Although mechanical exfoliation was successfully used to prepare BP nanosheets, it is still a challenge to produce novel BP nanostructures in high yield. A facile top-down approach for preparation of black phosphorus quantum dots (BPQDs) in solution is presented. The obtained BPQDs have a lateral size of 4.9±1.6 nm and thickness of 1.9±0.9 nm (ca. 4±2 layers). As a proof-of-concept application, by using BPQDs mixed with polyvinylpyrrolidone as the active layer, a flexible memory device was successfully fabricated that exhibits a nonvolatile rewritable memory effect with a high ON/OFF current ratio and good stability.

摘要

作为一种独特的二维纳米材料,层状黑磷(BP)纳米片在电子学领域显示出了广阔的应用前景。尽管机械剥离法已成功用于制备 BP 纳米片,但仍难以高产率制备新型 BP 纳米结构。本文提出了一种在溶液中制备黑磷量子点(BPQDs)的简便自上而下的方法。所得到的 BPQDs 的横向尺寸为 4.9±1.6 nm,厚度为 1.9±0.9 nm(约 4±2 层)。作为概念验证应用,通过使用 BPQDs 与聚乙烯吡咯烷酮混合作为活性层,成功制备了具有非易失性可重写存储效应的柔性存储器件,该器件具有高的 ON/OFF 电流比和良好的稳定性。

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