Wu Zitong, Liang Xinchao, Liu Yi, Xu Maoping, Zhu Rui, Tai Guoan
State Key Laboratory of Mechanics and Control for Aerospace Structures, Laboratory of Intelligent Nano Materials and Devices of Ministry of Education, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
Angew Chem Int Ed Engl. 2025 Jan 21;64(4):e202416041. doi: 10.1002/anie.202416041. Epub 2024 Oct 25.
Neuromorphic computing, marked by its parallel computational abilities and low power usage, has become pivotal in advancing artificial intelligence. However, the advancement of neuromorphic computing has faced significant obstacles due to the performance limitations of traditional memory devices struggling with high power consumption and limited reliability. Two-dimensional (2D) materials have been extensively investigated as high-performance memristive materials, but they are often restricted by fixed memristive properties, which complicate circuit design and limit flexibility. Here, we report that multilayer borophene nanosheets represent a breakthrough material, displaying anisotropic variable memristive properties. The nanosheets, comprising semiconductor α'-4H-borophene sheets and metal β-borophene sheets, have been synthesized on aluminum foil surface through chemical vapor deposition method. The multilayer borophene nanosheets exhibit volatile memory behavior in the vertical direction and non-volatile memory behavior in the planar direction. This innovative class of 2D nanosheets not only overcomes the limitations of conventional memory devices but also expands the potential applications of borophene-based memories in information storage and in-memory computing.
以其并行计算能力和低功耗为特点的神经形态计算，在推动人工智能发展方面已变得至关重要。然而，由于传统存储器件存在高功耗和可靠性有限等性能局限，神经形态计算的发展面临重大障碍。二维（2D）材料作为高性能忆阻材料已得到广泛研究，但它们常常受到固定忆阻特性的限制，这使得电路设计复杂化并限制了灵活性。在此，我们报告多层硼烯纳米片代表了一种突破性材料，展现出各向异性可变忆阻特性。这些纳米片由半导体α'-4H-硼烯片和金属β-硼烯片组成，通过化学气相沉积法在铝箔表面合成。多层硼烯纳米片在垂直方向表现出易失性存储行为，在平面方向表现出非易失性存储行为。这类创新的二维纳米片不仅克服了传统存储器件的局限性，还拓展了基于硼烯的存储器在信息存储和内存计算中的潜在应用。
