High- van der Waals Oxide MoO as Efficient Gate Dielectric for MoS Field-Effect Transistors.

Two-dimensional van der Waals crystals (2D vdW) are recognized as one of the potential materials to solve the physical limits caused by size scaling. Here, vdW metal oxide MoO is applied with the gate dielectric in a 2D field-effect transistor (FET). Due to its high dielectric constant and the good response of MoS to visible light, we obtained a field effect transistor for photodetection. In general, the device exhibits a threshold voltage near 0 V, Ion/Ioff ratio of 10, electron mobility about 85 cm V s and a good response to visible light, the responsivity is near 5 A/W at low laser power, which shows that MoO is a potential material as gate dielectric.