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用于氮化硅光子学的高效双级光栅耦合器。

Highly efficient dual-level grating couplers for silicon nitride photonics.

作者信息

Vitali Valerio, Lacava Cosimo, Domínguez Bucio Thalía, Gardes Frederic Y, Petropoulos Periklis

机构信息

Optoelectronics Research Centre, Highfield Campus, University of Southampton, Southampton, SO17 1BJ, UK.

Electrical, Computer and Biomedical Engineering Department, University of Pavia, Pavia, 27100, Italy.

出版信息

Sci Rep. 2022 Sep 14;12(1):15436. doi: 10.1038/s41598-022-19352-9.

Abstract

We propose and numerically demonstrate a versatile strategy that allows designing highly efficient dual-level grating couplers in different silicon nitride-based photonic platforms. The proposed technique, which can generally be applied to an arbitrary silicon nitride film thickness, is based on the simultaneous optimization of two grating coupler levels to obtain high directionality and grating-fibre mode matching at the same time. This is achieved thanks to the use of two different linear apodizations, with opposite signs, applied to the two grating levels, whose design parameters are determined by using a particle swarm optimization method. Numerical simulations were carried out considering different silicon nitride platforms with 150, 300, 400 and 500 nm thicknesses and initially employing silicon as the material for the top level grating coupler. The use of Si-rich silicon nitride with a refractive index in the range 2.7-3.3 for the top layer material enabled to obtain similar performance (coupling efficiency exceeding - 0.45 dB for the 400 nm thick silicon nitride platform) with relaxed fabrication tolerances. To the best of our knowledge, these numerical results represent the best performance ever reported in the literature for silicon nitride grating couplers without the use of any back-reflector.

摘要

我们提出并通过数值模拟演示了一种通用策略,该策略能够在不同的基于氮化硅的光子平台中设计高效的双层光栅耦合器。所提出的技术基于对两个光栅耦合器层的同时优化,以同时获得高方向性和光栅 - 光纤模式匹配,该技术通常可应用于任意厚度的氮化硅薄膜。这是通过对两个光栅层应用具有相反符号的两种不同线性变迹来实现的,其设计参数通过粒子群优化方法确定。考虑了厚度为150、300、400和500 nm的不同氮化硅平台,并最初将硅用作顶层光栅耦合器的材料进行了数值模拟。使用折射率在2.7 - 3.3范围内的富硅氮化硅作为顶层材料,能够在放宽制造公差的情况下获得类似的性能(对于400 nm厚的氮化硅平台,耦合效率超过 - 0.45 dB)。据我们所知,这些数值结果代表了在不使用任何背反射器的情况下,文献中报道的氮化硅光栅耦合器的最佳性能。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0081/9474549/cfa5266e7a9c/41598_2022_19352_Fig1_HTML.jpg

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