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用于氮化硅光纤 - 芯片耦合的高效DBR辅助光栅啁啾发生器

High efficiency DBR assisted grating chirp generators for silicon nitride fiber-chip coupling.

作者信息

Nambiar Siddharth, Ranganath Praveen, Kallega Rakshitha, Selvaraja Shankar Kumar

机构信息

Center for Nanoscience and Engineering, Indian Institute of Science, Bengaluru, 560012, India.

出版信息

Sci Rep. 2019 Dec 11;9(1):18821. doi: 10.1038/s41598-019-55140-8.

Abstract

Silicon Nitride (SiN) is emerging as a promising material for a variety of integrated photonic applications. Given its low index contrast however, a key challenge remains to design efficient couplers for the numerous platforms in SiN photonics portfolio. Using a combination of bottom reflector and a chirp generating algorithm, we propose and demonstrate high efficiency, grating couplers on two distinct SiN platforms. For a partially etched grating on 500 nm thick SiN, a calculated peak efficiency of -0.5 dB/coupler is predicted, while for a fully etched grating on 400 nm thick SiN, an efficiency of -0.4 dB/coupler is predicted. Experimentally measured coupling efficiencies are observed to be -1.17 and -1.24 dB/coupler for the partial and fully etched grating couplers respectively in the C-L band region. Furthermore, through numerical simulations, it is shown that the chirping algorithm can be implemented in eight additional combinations comprising SiN film thickness between 300-700 nm as well as alternate claddings, to achieve a per coupler loss between -0.33 to -0.65 dB.

摘要

氮化硅(SiN)正成为用于各种集成光子应用的一种有前景的材料。然而,鉴于其低折射率对比度,为SiN光子学产品组合中的众多平台设计高效耦合器仍然是一个关键挑战。通过结合底部反射器和啁啾生成算法,我们在两个不同的SiN平台上提出并演示了高效光栅耦合器。对于500nm厚的SiN上的部分蚀刻光栅,预测的计算峰值效率为-0.5dB/耦合器,而对于400nm厚的SiN上的完全蚀刻光栅,预测效率为-0.4dB/耦合器。在C-L波段区域,实验测量的部分蚀刻和完全蚀刻光栅耦合器的耦合效率分别为-1.17和-1.24dB/耦合器。此外,通过数值模拟表明,啁啾算法可以在包括300 - 700nm之间的SiN膜厚度以及交替包层的另外八种组合中实现,以实现每个耦合器-0.33至-0.65dB的损耗。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a7b9/6906413/2962983c23b7/41598_2019_55140_Fig1_HTML.jpg

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