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二维范德华拓扑材料:制备、性质及器件应用

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications.

作者信息

Zhang Gaojie, Wu Hao, Zhang Liang, Yang Li, Xie Yuanmiao, Guo Fei, Li Hongda, Tao Boran, Wang Guofu, Zhang Wenfeng, Chang Haixin

机构信息

Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.

Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.

出版信息

Small. 2022 Nov;18(47):e2204380. doi: 10.1002/smll.202204380. Epub 2022 Sep 22.

DOI:10.1002/smll.202204380
PMID:36135779
Abstract

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.

摘要

在过去十年中,二维范德华(vdW)拓扑材料(TMs),包括拓扑绝缘体和拓扑半金属,结合了原子级平整的二维层和拓扑非平凡能带结构,在凝聚态物理和材料科学领域引起了越来越多的关注。这些易于解理和集成的TMs为在二维极限下探索拓扑物理提供了理想平台,在该极限下可能会出现新的物理现象,并且在控制和研究纳米级拓扑相中的奇异特性及器件应用方面具有潜力。然而,仍需要多方面的努力,这是二维vdW TMs实际应用的前提条件。在此,本综述聚焦于二维vdW TMs的制备、性质及器件应用。首先,总结了二维vdW TMs的三种常见制备策略,包括单晶剥离、化学气相沉积和分子束外延。其次,介绍了二维vdW TMs各种性质的起源和调控,涉及电子性质、输运性质、光电性质、热电性、铁电性和磁性。第三,展示了二维vdW TMs的一些器件应用,包括场效应晶体管、存储器、自旋电子器件和光电探测器。最后,简要讨论了二维vdW TMs在二维拓扑电子学实际应用中的一些重大挑战和机遇。

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