Lee Ji-Eun, Liu Yu, Hwang Jinwoong, Hwang Choongyu, Petrovic Cedomir, Park Se Young, Ryu Hyejin, Mo Sung-Kwan
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea.
Nano Converg. 2024 Dec 2;11(1):50. doi: 10.1186/s40580-024-00457-y.
Topological surface states, protected by the global symmetry of the materials, are the keys to understanding various novel electrical, magnetic, and optical properties. TaSb is a newly discovered topological material with unique transport phenomena, including negative magnetoresistance and resistivity plateau, whose microscopic understanding is yet to be reached. In this study, we investigate the electronic band structure of TaSb using angle-resolved photoemission spectroscopy and density functional theory. Our analyses reveal distinct bulk and surface states in TaSb, providing direct evidence of its topological nature. Notably, surface states predominate the electronic contribution near the Fermi level, while bulk bands are mostly located at higher binding energies. Our study underlines the importance of systematic investigations into the electronic structures of topological materials, offering insights into their fundamental properties and potential applications in future technologies.
由材料的全局对称性保护的拓扑表面态是理解各种新颖电学、磁学和光学性质的关键。TaSb是一种新发现的具有独特输运现象的拓扑材料，包括负磁阻和电阻率平台，其微观理解尚未达成。在本研究中，我们使用角分辨光电子能谱和密度泛函理论研究了TaSb的电子能带结构。我们的分析揭示了TaSb中明显的体态和表面态，为其拓扑性质提供了直接证据。值得注意的是，表面态在费米能级附近的电子贡献中占主导地位，而体态大多位于更高的结合能处。我们的研究强调了对拓扑材料电子结构进行系统研究的重要性，为其基本性质和未来技术中的潜在应用提供了见解。
