Zhang Xiankun, Zhang Yanzhe, Yu Huihui, Zhao Hang, Cao Zhihong, Zhang Zheng, Zhang Yue
Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Adv Mater. 2023 Dec;35(50):e2207966. doi: 10.1002/adma.202207966. Epub 2023 Mar 23.
The interface is the device. As the feature size rapidly shrinks, silicon-based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short-channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high-quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all-2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all-2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all-2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all-2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon-based industrial technology is pointed out as a critical challenge.
界面即器件。随着特征尺寸迅速缩小,硅基电子器件正面临材料性能下降和界面质量退化等多重挑战。超薄二维材料因其原子级平整表面以及对短沟道效应的出色免疫能力,被视作未来电子学领域的潜在候选材料。此外,由于二维材料具有自然终止的表面以及层间较弱的范德华相互作用,它们能够自由堆叠,不受晶格匹配限制,从而形成具有任意组分和扭转角的高质量异质结构界面。可控的层间能带排列以及优化的界面载流子行为,使得基于二维范德华界面的全二维电子器件展现出更全面的功能和更优异的性能。特别是,利用小尺寸的全二维器件实现与多个传统器件相同的计算能力,被认为是未来电子学的关键发展方向。在此,系统地综述了全二维范德华界面的独特性质及其构建方法,并分别总结了不同范德华界面在二维电子学中的主要性能贡献。最后,讨论了全二维范德华电子学的最新进展与挑战,并指出提高二维材料器件与硅基工业技术的兼容性是一项关键挑战。