Abid Idriss, Hamdaoui Youssef, Mehta Jash, Derluyn Joff, Medjdoub Farid
IEMN (Institute of Electronics, Microelectronics and Nanotechnology), Avenue Poincaré, 59650 Lille, France.
SOITEC-Belgium N.V., Kempische Steenweg 293, 3500 Hasselt, Belgium.
Micromachines (Basel). 2022 Sep 14;13(9):1519. doi: 10.3390/mi13091519.
We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate, enabling a positive threshold voltage higher than +1 V. The buffer structure was based on AlN/GaN superlattices (SLs), delivering a vertical breakdown voltage close to 1.5 kV with a low leakage current all the way to 1200 V. With the grounded substrate, the hard breakdown voltage transistors at V = 0 V is 1.45 kV, corresponding to an outstanding average vertical breakdown field higher than 2.4 MV/cm. High-voltage characterizations revealed a state-of-the-art combination of breakdown voltage at V = 0 V together with low buffer electron trapping effects up to 1.4 kV, as assessed by means of substrate ramp measurements.
我们报道了用于高压操作的硅基氮化铝镓/氮化镓常开晶体管的制造及电学特性。通过在栅极下方采用p型氮化镓（p-GaN）帽层实现了常开配置，使得阈值电压高于 +1 V。缓冲结构基于氮化铝/氮化镓超晶格（SLs），在高达1200 V的电压下具有低漏电流，垂直击穿电压接近1.5 kV。对于接地衬底，V = 0 V时的硬击穿电压晶体管为1.45 kV，对应着高于2.4 MV/cm的出色平均垂直击穿场。高压特性表明，通过衬底斜坡测量评估，在V = 0 V时的击穿电压与高达1.4 kV时的低缓冲电子俘获效应达到了先进水平的结合。
