Abid Idriss, Kabouche Riad, Bougerol Catherine, Pernot Julien, Masante Cedric, Comyn Remi, Cordier Yvon, Medjdoub Farid
IEMN (Institute of Electronics, Microelectronics and Nanotechnology), Avenue Poincaré, 59650 Villeneuve d'Ascq, France.
CNRS-Institut Néel, University Grenoble-Alpes, 38000 Grenoble, France.
Micromachines (Basel). 2019 Oct 12;10(10):690. doi: 10.3390/mi10100690.
In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral breakdown voltage above 10 kV was observed on the thin channel structure for large contact distances. Also, the buffer assessment revealed a remarkable breakdown field of 5 MV/cm for short contact distances, which is far beyond the theoretical limit of the GaN-based material system. The potential interest of the thin channel configuration in AlN-based high electron mobility transistors is confirmed by the much lower breakdown field that is obtained on the thick channel structure. Furthermore, fabricated transistors are fully functional on both structures with low leakage current, low on-resistance, and reduced temperature dependence as measured up to 300 °C. This is attributed to the ultra-wide bandgap AlN buffer, which is extremely promising for high power, high temperature future applications.
在本文中，我们展示了通过分子束外延在AlN/蓝宝石上再生长的基于AlN的薄沟道和厚沟道AlGaN/GaN异质结构的制备及直流/高压特性。对于大接触距离的薄沟道结构，观察到非常高的横向击穿电压高于10 kV。此外，缓冲层评估显示短接触距离时具有5 MV/cm的显著击穿场，这远远超出了基于GaN的材料系统的理论极限。厚沟道结构上获得的低得多的击穿场证实了薄沟道配置在基于AlN的高电子迁移率晶体管中的潜在价值。此外，所制备的晶体管在两种结构上均能正常工作，具有低漏电流、低导通电阻以及在高达300°C测量时降低的温度依赖性。这归因于超宽带隙AlN缓冲层，其对于未来的高功率、高温应用极具前景。
