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OH 端接的 MXene 材料的近自由电子态及受电子 - 声子散射限制的电导率:以 HfC(OH) 单层为例的研究

The nearly free electron states and the conductivity limited by electron-phonon scattering of an OH-terminated MXene material, a case study of the HfC(OH) monolayer.

作者信息

Feng Lanting, Yu Guodong, Zheng Yisong

机构信息

Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education) and Department of Physics, Jilin University, Changchun 130012, China.

Center for Quantum Sciences and School of Physics, Northeast Normal University, Changchun 130024, China.

出版信息

Phys Chem Chem Phys. 2022 Oct 12;24(39):24219-24227. doi: 10.1039/d2cp03319d.

Abstract

Reducing the electron-phonon scattering is always desirable for realizing high conductivity of actual materials at room temperature. It is seemingly feasible in some OH-terminated MXenes such as the HfC(OH) monolayer, which hosts the so-called nearly free electron states (NFESs) near the Fermi energy. The NFESs are characterized by a large separation between the major electronic probability distribution and the atomic layer of MXenes. This implies that the NFESs suffer from a very weak electron-phonon scattering, hence the high conductivity at room temperature of these materials. We perform first principles calculations on the conductivity limited by the electron-phonon (e-ph) scattering of the HfC(OH) monolayer. Our results indicate that the conductivity of the HfC(OH) monolayer at room temperature is indeed higher than those of most of the MXene materials. However, such a high conductivity cannot be attributed to the existence of the NFESs because of their relatively low electronic band velocity. This conclusion is applicable to other OH-terminated MXene materials such as ZrC(OH) since their band structures around the Fermi energy are highly analogous. Our study suggests that both large band velocity and weak e-ph coupling are important for realizing ultrahigh conductivity facilitated by the NFESs in materials.

摘要

对于在室温下实现实际材料的高导电性而言,减少电子 - 声子散射一直是人们所期望的。在一些羟基端基的MXenes材料中,如HfC(OH)单层,这似乎是可行的,该材料在费米能级附近存在所谓的近自由电子态(NFESs)。NFESs的特征是主要电子概率分布与MXenes原子层之间存在较大间距。这意味着NFESs遭受的电子 - 声子散射非常弱,因此这些材料在室温下具有高导电性。我们对HfC(OH)单层的电子 - 声子(e-ph)散射限制的电导率进行了第一性原理计算。我们的结果表明,HfC(OH)单层在室温下的电导率确实高于大多数MXene材料。然而,由于其相对较低的电子能带速度,如此高的电导率不能归因于NFESs的存在。这一结论适用于其他羟基端基的MXene材料,如ZrC(OH),因为它们在费米能级附近的能带结构高度相似。我们的研究表明,大的能带速度和弱的e-ph耦合对于在材料中通过NFESs实现超高导电性都很重要。

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