Twitto Avraham, Stern Chen, Poplinger Michal, Perelshtein Ilana, Saha Sabyasachi, Jain Akash, Koski Kristie J, Deepak Francis Leonard, Ramasubramaniam Ashwin, Naveh Doron
Faculty of Engineering, Bar-Ilan University, Ramat Gan52900, Israel.
Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan52900, Israel.
ACS Nano. 2022 Oct 25;16(10):17080-17086. doi: 10.1021/acsnano.2c07347. Epub 2022 Oct 12.
Metal-semiconductor interfaces are ubiquitous in modern electronics. These quantum-confined interfaces allow for the formation of atomically thin polarizable metals and feature rich optical and optoelectronic phenomena, including plasmon-induced hot-electron transfer from metal to semiconductors. Here, we report on the metal-semiconductor interface formed during the intercalation of zero-valent atomic layers of tin (Sn) between layers of MoS, a van der Waals layered material. We demonstrate that Sn interaction leads to the emergence of gap states within the MoS band gap and to corresponding plasmonic features between 1 and 2 eV (0.6-1.2 μm). The observed stimulation of the photoconductivity, as well as the extension of the spectral response from the visible regime toward the mid-infrared suggests that hot-carrier generation and internal photoemission take place.
金属 - 半导体界面在现代电子学中无处不在。这些量子限制界面允许形成原子级薄的可极化金属，并具有丰富的光学和光电现象，包括等离子体激元诱导的热电子从金属转移到半导体。在此，我们报道了在范德华层状材料二硫化钼（MoS₂）层间插入零价锡（Sn）原子层时形成的金属 - 半导体界面。我们证明，Sn的相互作用导致在MoS₂带隙内出现能隙态，并在1至2电子伏特（0.6 - 1.2微米）之间产生相应的等离子体激元特征。观察到的光电导率增强以及光谱响应从可见光区域向中红外区域的扩展表明发生了热载流子产生和内光电发射。
