Shevlyagin Alexander V, Il'yaschenko Vladimir M, Kuchmizhak Aleksandr A, Mitsai Eugeny V, Amosov Andrey V, Balagan Semyon A, Kulinich Sergei A
Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Science, 5 Radio Str., 690041 Vladivostok, Russia.
Pacific Quantum Center, Far Eastern Federal University, 690041 Vladivostok, Russia.
Materials (Basel). 2022 Sep 24;15(19):6637. doi: 10.3390/ma15196637.
This paper reports on a facile bottom-up method for the direct integration of a silicon (Si)-magnesium silicide (MgSi) heterojunction solar cell (HSC) with a textured rear reflector made of stainless steel (SS). Modified wet chemical etching and post processing of SS substrates resulted in the formation of both a rough surface texture and diffusion barrier layer, consisting of magnetite (FeO) with reduced optical reflection. Then, Si, MgSi and CaSi layers were stepwise thermally evaporated onto the textured SS surface. No traces of Fe and Cr silicide phases were detected by Raman spectroscopy, confirming effective suppression of impurity diffusion from the SS to the upper layers at least at temperatures required for Si deposition, as well as MgSi and CaSi formation. The obtained black-SS/FeO/Si/MgSi/CaSi sample preserved, to some extent, its underlying textured morphology and demonstrated an averaged reflection of 15% over the spectral range of 200-1800 nm, while its prototype HSC possessed a wideband photoresponse with a photoelectric conversion efficiency of 7.5% under AM1.5 illumination. Moreover, Si layers deposited alone onto a black-SS substrate demonstrated competitive antireflection properties compared with black Si (b-Si) obtained by traditional top-down etching approaches, and hybrid b-Si/textured-SS structures with a glue-bonded interlayer.
本文报道了一种简便的自下而上的方法，用于将硅（Si）-硅化镁（MgSi）异质结太阳能电池（HSC）与由不锈钢（SS）制成的纹理化后反射器直接集成。对SS基板进行改进的湿化学蚀刻和后处理，形成了粗糙的表面纹理和扩散阻挡层，该扩散阻挡层由具有降低光反射率的磁铁矿（FeO）组成。然后，将Si、MgSi和CaSi层逐步热蒸发到纹理化的SS表面上。拉曼光谱未检测到Fe和Cr硅化物相的痕迹，这证实了至少在Si沉积所需的温度下有效抑制了杂质从SS扩散到上层，以及MgSi和CaSi的形成。所获得的黑色SS/FeO/Si/MgSi/CaSi样品在一定程度上保留了其下层的纹理形态，并且在200-1800nm的光谱范围内平均反射率为15%，而其原型HSC在AM1.5光照下具有宽带光响应，光电转换效率为7.5%。此外，单独沉积在黑色SS基板上的Si层与通过传统自上而下蚀刻方法获得的黑色Si（b-Si）相比，表现出具有竞争力的抗反射性能，以及具有胶合中间层的混合b-Si/纹理化SS结构。
