Torabi Aida, Sullivan James, Reich Carey, Wunch Melissa A, Garcia Juan Alexandro, Beck Claudia, Munshi Amit H, Shimpi Tushar, Roberts Mienie, Sampath Walajabad, Harvey Taylor B
Department of Science and Mathematics, Texas A&M University-Central Texas, Killeen, Texas 76549, United States.
Department of Mechanical Engineering, Colorado State University, Fort Collins, Colorado 80523, United States.
ACS Omega. 2022 Oct 5;7(41):36873-36879. doi: 10.1021/acsomega.2c05640. eCollection 2022 Oct 18.
Full-spectrum cathodoluminescence (CL) mapping provides a point-by-point spatial measurement of the apparent band gap of a semiconductor thin film. In most studies, analysis of the electrical film properties from CL is presented as color mapping images. We have developed a spectra data analysis algorithm to functionalize, analyze, and generate statistical measurements of the luminescence data to provide additional insights. This algorithm was coded in the R language program, and a set of CdMgSeTe films were studied as an application case study. CL maps were measured for samples with different luminescent responses. A quantitative measure of the heterogeneity of the films was generated by statistical analysis of luminescent intensity and wavelength, spectra type curves, frequency distributions of peak wavelength, and relative intensity maps. The final CL analysis facilitates the investigation of the CdMgSeTe films and has potential applications for many semiconductor films.
全光谱阴极发光（CL）映射提供了半导体薄膜表观带隙的逐点空间测量。在大多数研究中，从CL对薄膜电学性质的分析以彩色映射图像呈现。我们开发了一种光谱数据分析算法，用于对发光数据进行功能化、分析和生成统计测量，以提供更多见解。该算法用R语言程序编码，并以一组CdMgSeTe薄膜作为应用案例进行研究。对具有不同发光响应的样品测量了CL映射。通过对发光强度和波长、光谱类型曲线、峰值波长频率分布以及相对强度映射的统计分析，生成了薄膜异质性的定量度量。最终的CL分析有助于对CdMgSeTe薄膜进行研究，并对许多半导体薄膜具有潜在应用。
