用于HS气体传感器的多孔CuO薄膜的表征

Characterization of Porous CuO Films for HS Gas Sensors.

作者信息

Jung Dawoon, Hwang Sehoon, Kim Hyun-Jong, Han Jae-Hee, Lee Ho-Nyun

机构信息

Heat & Surface Technology R&D Department, Korea Institute of Industrial Technology (KITECH), Incheon 21999, Korea.

Department of Materials Science and Engineering, Gacheon University, Seongnam-si 13120, Korea.

出版信息

Materials (Basel). 2022 Oct 18;15(20):7270. doi: 10.3390/ma15207270.

DOI:10.3390/ma15207270

PMID:36295331

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9610780/

Abstract

Using a thermal evaporator, various porous Cu films were deposited according to the deposition pressure. CuO films were formed by post heat treatment in the air. Changes in morphological and structural characteristics of films were analyzed using field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). Relative density and porosity were quantitatively calculated. CuO films with various pores ranging from 39.4 to 95.2% were successfully manufactured and were applied as gas sensors for HS detection on interdigitated electrode (IDE) substrate. Resistance change was monitored at 325 °C and an increase in porosity of the film improved the sensor performance. The CuO-10 gas sensor with a high porosity of 95.2% showed a relatively high response (2.7) and a fast recovery time (514 s) for HS 1.5 ppm. It is confirmed that the porosity of the CuO detection layer had a significant effect on response and recovery time.

摘要

使用热蒸发器，根据沉积压力沉积了各种多孔铜膜。通过在空气中进行后热处理形成了氧化铜膜。使用场发射扫描电子显微镜（FE-SEM）和X射线衍射（XRD）分析了膜的形态和结构特征变化。定量计算了相对密度和孔隙率。成功制备了孔隙率在39.4%至95.2%之间的各种氧化铜膜，并将其用作叉指电极（IDE）基板上用于检测硫化氢的气体传感器。在325℃下监测电阻变化，膜孔隙率的增加改善了传感器性能。孔隙率为95.2%的高孔隙率CuO-10气体传感器对1.5 ppm硫化氢显示出相对较高的响应（2.7）和快速恢复时间（514秒）。证实了氧化铜检测层的孔隙率对响应和恢复时间有显著影响。