Patel Pratik D, Sharma Akariti, Devanarayanan Bharathiganesh, Dutta Paramita, Singh Navinder
Theoretical Physics Division, Physical Research Laboratory, Navrangpura, Ahmedabad 380009, India.
M.B. Patel Science college, Anand 388001, Gujarat, India.
J Phys Condens Matter. 2022 Nov 15;51(3). doi: 10.1088/1361-648X/aca0d6.
We report various phase transitions in half-Heusler TbPtBi compound using density functional theory. Specifically, the inclusion of spin-orbit coupling (SOC) leads to the band inversion resulting in the transition from the metallic to the topological semimetallic phase. However, in the presence of SOC, there is a phase transition from the topological semimetal to the trivial semimetal when the material is subjected to compressive strain-7%. Subsequently, under the further increase of compressive strain(⩾-7%), we find an opening of a direct band gap at the point, driving the system from the trivial semimetallic to a semiconducting state with changes in the sequence of the bands. In the absence of SOC, only the transition from the metallic to the semiconducting phase is noticed. Under tensile strain, the TbPtBi compound maintains its phase as in the unstrained condition but with an increase in the hole pocket at the Fermi level, both in the absence and presence of SOC. These tunable phase transitions (especially as a fraction of strain) make this compound very promising for application in various quantum devices, such as highly sensitive strain gauges.
我们使用密度泛函理论报道了半赫斯勒化合物TbPtBi中的各种相变。具体而言,包含自旋轨道耦合(SOC)会导致能带反转,从而使材料从金属相转变为拓扑半金属相。然而,在存在SOC的情况下,当材料受到-7%的压缩应变时,会发生从拓扑半金属到平凡半金属的相变。随后,在压缩应变进一步增加(⩾ -7%)时,我们发现在该点出现了直接带隙,随着能带顺序的变化,驱动系统从平凡半金属态转变为半导体态。在没有SOC的情况下,仅观察到从金属相到半导体相的转变。在拉伸应变下,无论有无SOC,TbPtBi化合物都保持其在无应变条件下的相态,但费米能级处的空穴口袋会增加。这些可调节的相变(特别是作为应变的一部分)使得该化合物在各种量子器件(如高灵敏度应变计)中的应用非常有前景。