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基于溴化铅配合物光催化的钙钛矿量子点直接原位光刻

Direct in situ photolithography of perovskite quantum dots based on photocatalysis of lead bromide complexes.

作者信息

Zhang Pingping, Yang Gaoling, Li Fei, Shi Jianbing, Zhong Haizheng

机构信息

MIIT Key Laboratory for Low Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China.

MIIT Key Laboratory for Low Dimensional Quantum Structure and Devices, School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, China.

出版信息

Nat Commun. 2022 Nov 7;13(1):6713. doi: 10.1038/s41467-022-34453-9.

DOI:10.1038/s41467-022-34453-9
PMID:36344550
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9640639/
Abstract

Photolithography has shown great potential in patterning solution-processed nanomaterials for integration into advanced optoelectronic devices. However, photolithography of perovskite quantum dots (PQDs) has so far been hindered by the incompatibility of perovskite with traditional optical lithography processes where lots of solvents and high-energy ultraviolet (UV) light exposure are required. Herein, we report a direct in situ photolithography technique to pattern PQDs based on the photopolymerization catalyzed by lead bromide complexes. By combining direct photolithography with in situ fabrication of PQDs, this method allows to directly photolithograph perovskite precursors, avoiding the complicated lift-off processes and the destruction of PQDs by solvents or high-energy UV light, as PQDs are produced after lithography exposure. We further demonstrate that the thiol-ene free-radical photopolymerization is catalyzed by lead bromide complexes in the perovskite precursor solution, while no external initiators or catalysts are needed. Using direct in situ photolithography, PQD patterns with high resolution up to 2450 pixels per inch (PPI), excellent fluorescence uniformity, and good stability, are successfully demonstrated. This work opens an avenue for non-destructive direct photolithography of high-efficiency light-emitting PQDs, and potentially expands their application in various integrated optoelectronic devices.

摘要

光刻技术在对溶液处理的纳米材料进行图案化以集成到先进光电器件方面显示出巨大潜力。然而,迄今为止,钙钛矿量子点(PQD)的光刻技术受到钙钛矿与传统光学光刻工艺不相容性的阻碍,传统光学光刻工艺需要大量溶剂和高能紫外线(UV)照射。在此,我们报道了一种基于溴化铅配合物催化的光聚合作用对PQD进行图案化的直接原位光刻技术。通过将直接光刻与PQD的原位制备相结合,该方法能够直接对钙钛矿前驱体进行光刻,避免了复杂的剥离工艺以及溶剂或高能UV光对PQD的破坏,因为PQD是在光刻曝光后产生的。我们进一步证明,在钙钛矿前驱体溶液中,硫醇-烯自由基光聚合是由溴化铅配合物催化的,而无需外部引发剂或催化剂。使用直接原位光刻技术,成功展示了分辨率高达每英寸2450像素(PPI)、具有优异荧光均匀性和良好稳定性的PQD图案。这项工作为高效发光PQD的无损直接光刻开辟了一条途径,并有可能扩大其在各种集成光电器件中的应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ba0/9640639/6fb288740b50/41467_2022_34453_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ba0/9640639/d8b7ecd37c64/41467_2022_34453_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ba0/9640639/1d22b31f34b9/41467_2022_34453_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ba0/9640639/e9f76226eb8e/41467_2022_34453_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ba0/9640639/950474d14b2d/41467_2022_34453_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ba0/9640639/6fb288740b50/41467_2022_34453_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ba0/9640639/d8b7ecd37c64/41467_2022_34453_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ba0/9640639/1d22b31f34b9/41467_2022_34453_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ba0/9640639/e9f76226eb8e/41467_2022_34453_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ba0/9640639/950474d14b2d/41467_2022_34453_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ba0/9640639/6fb288740b50/41467_2022_34453_Fig5_HTML.jpg

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