Chen Zhong, Man Zhongwei, Rao Shichao, Zhao Jinxing, Wang Shuaibing, Zhang Runtong, Teng Feng, Tang Aiwei
Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China.
Light Sci Appl. 2025 Jul 24;14(1):251. doi: 10.1038/s41377-025-01918-7.
Recently, colloidal quantum dots (QDs) with high luminescent efficiency and tunable colors have become ideal materials for next-generation display devices. Direct photolithography is a powerful tool for patterning QD devices, but it faces the serious issue of degradation in the photophysical properties of the patterned QDs. Here, we use relatively rigid cyclopentane as a bridging group to design the crosslinker CPTA, achieving high-resolution direct photolithography of QDs with nearly nondestructive under ambient conditions. The key to the crosslinker design is the introduction of a rigid bridging group that elevates the LUMO level, providing a stronger energy barrier to prevent QD electrons from being trapped or undergoing non-radiative recombination, thus preserving their PL and EL properties. The efficient and high-resolution RGB line and dot arrays were fabricated with pixel sizes down to 1 μm and a resolution of up to 6350 PPI. The patterned RGB QD films, especially red QDs, maintained their optical and optoelectronic properties, with patterned red QLEDs achieving peak external quantum efficiency (EQE) of 21% and a maximum luminance (L) of ~180,000 cd m⁻², matching pristine devices. These results highlight the importance of photo-crosslinker design for nondestructive QDs patterning, paving the way for advanced display applications in patterned QLED technology.
最近，具有高发光效率和可调节颜色的胶体量子点（QDs）已成为下一代显示设备的理想材料。直接光刻是用于对量子点器件进行图案化的强大工具，但它面临着图案化量子点的光物理性质退化的严重问题。在这里，我们使用相对刚性的环戊烷作为桥连基团来设计交联剂CPTA，在环境条件下实现了对量子点的高分辨率直接光刻，且几乎无损。交联剂设计的关键在于引入一个刚性桥连基团，该基团提高了最低未占分子轨道（LUMO）能级，提供了更强的能垒，以防止量子点电子被俘获或发生非辐射复合，从而保留其光致发光（PL）和电致发光（EL）特性。制造出了高效且高分辨率的RGB线和点阵列，像素尺寸低至1μm，分辨率高达6350像素每英寸（PPI）。图案化的RGB量子点薄膜，尤其是红色量子点，保持了它们的光学和光电特性，图案化的红色量子点发光二极管（QLED）实现了21%的峰值外量子效率（EQE）和约180,000 cd m⁻²的最大亮度（L），与原始器件相当。这些结果突出了光交联剂设计对于无损量子点图案化的重要性，为图案化量子点发光二极管技术在先进显示应用方面铺平了道路。
