Bond-Orbital-Resolved Piezoelectricity in Sp-Hybridized Monolayer Semiconductors.

Sp-hybridized monolayer semiconductors (e.g., planar group III-V and IV-IV binary compounds) with inversion symmetry breaking (ISB) display piezoelectricity governed by their σ- and π-bond electrons. Here, we studied their bond-orbital-resolved electronic piezoelectricity (i.e., the σ- and π-piezoelectricity). We formulated a tight-binding piezoelectric model to reveal the different variations of σ- and π-piezoelectricity with the ISB strength (Δ). As Δ varied from positive to negative, the former decreased continuously, but the latter increased piecewise and jumped at Δ=0 due to the criticality of the π-electrons' ground-state geometry near this quantum phase-transition point. This led to a piezoelectricity predominated by the π-electrons for a small |Δ|. By constructing an analytical model, we clarified the microscopic mechanisms underlying the anomalous π-piezoelectricity and its subtle relations with the valley Hall effect. The validation of our models was justified by applying them to the typical sp monolayers including hexagonal silicon carbide, Boron-X (X = N, P, As, Ab), and a BN-doped graphene superlattice.