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InP/ZnSe/ZnS核/壳/壳量子点中的超快电荷载流子动力学

Ultrafast Charge Carrier Dynamics in InP/ZnSe/ZnS Core/Shell/Shell Quantum Dots.

作者信息

Zeng Shijia, Li Zhenbo, Tan Wenjiang, Si Jinhai, Li Yuren, Hou Xun

机构信息

Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Laboratory of Information Photonic Technique, School of Electronics Science and Engineering, Xi'an Jiaotong University, 28 Xianning Road, Xi'an 710049, China.

出版信息

Nanomaterials (Basel). 2022 Oct 28;12(21):3817. doi: 10.3390/nano12213817.

DOI:10.3390/nano12213817
PMID:36364592
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9657385/
Abstract

The excellent performance of InP/ZnSe/ZnS core/shell/shell quantum dots (CSS-QDs) in light-emitting diodes benefits from the introduction of a ZnSe midshell. Understanding the changes of ultrafast carrier dynamics caused by the ZnSe midshell is important for their optoelectronic applications. Herein, we have compared the ultrafast carrier dynamics in CSS-QDs and InP/ZnS core/shell QDs (CS-QDs) using femtosecond transient absorption spectroscopy. The results show that the ZnSe midshell intensifies the electron delocalization and prolongs the in-band relaxation time of electrons from 238 fs to 350 fs, and that of holes from hundreds of femtoseconds to 1.6 ps. We also found that the trapping time caused by deep defects increased from 25.6 ps to 76 ps, and there were significantly reduced defect emissions in CSS-QDs. Moreover, the ZnSe midshell leads to a significantly increased density of higher-energy hole states above the valence band-edge, which may reduce the probability of Auger recombination caused by the positive trion. This work enhances our understanding of the excellent performance of the CSS-QDs applied to light-emitting diodes, and is likely to be helpful for the further optimization and design of optoelectronic devices based on the CSS-QDs.

摘要

InP/ZnSe/ZnS核/壳/壳量子点(CSS-QDs)在发光二极管中的优异性能得益于ZnSe中间壳层的引入。了解由ZnSe中间壳层引起的超快载流子动力学变化对于其光电应用至关重要。在此,我们使用飞秒瞬态吸收光谱法比较了CSS-QDs和InP/ZnS核/壳量子点(CS-QDs)中的超快载流子动力学。结果表明,ZnSe中间壳层增强了电子离域,并将电子的带内弛豫时间从238飞秒延长至350飞秒,空穴的带内弛豫时间从数百飞秒延长至1.6皮秒。我们还发现,由深缺陷引起的俘获时间从25.6皮秒增加到76皮秒,并且CSS-QDs中的缺陷发射显著减少。此外,ZnSe中间壳层导致价带边缘以上高能空穴态的密度显著增加,这可能降低由正三激子引起的俄歇复合概率。这项工作增进了我们对应用于发光二极管的CSS-QDs优异性能的理解,并且可能有助于基于CSS-QDs的光电器件的进一步优化和设计。

相似文献

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本文引用的文献

1
Ultrafast Kinetics of Chlorinated Polymer Donors: A Faster Excitonic Dissociation Path.氯化聚合物供体的超快动力学:一条更快的激子解离途径。
ACS Appl Mater Interfaces. 2022 Feb 9;14(5):6945-6957. doi: 10.1021/acsami.1c24348. Epub 2022 Jan 27.
2
Tuning Hot Carrier Dynamics of InP/ZnSe/ZnS Quantum Dots by Shell Morphology Control.通过壳层形貌控制调节 InP/ZnSe/ZnS 量子点的热载流子动力学
Small. 2022 Feb;18(8):e2105492. doi: 10.1002/smll.202105492. Epub 2021 Dec 9.
3
Increasing the Energy Gap between Band-Edge and Trap States Slows Down Picosecond Carrier Trapping in Highly Luminescent InP/ZnSe/ZnS Quantum Dots.
增加能带边缘和陷阱态之间的能隙会减缓高发光 InP/ZnSe/ZnS 量子点中皮秒载流子俘获。
Small. 2021 Dec;17(52):e2102792. doi: 10.1002/smll.202102792. Epub 2021 Oct 11.
4
Semiconductor quantum dots: Technological progress and future challenges.半导体量子点:技术进展与未来挑战。
Science. 2021 Aug 6;373(6555). doi: 10.1126/science.aaz8541. Epub 2021 Aug 5.
5
Negative Trion Auger Recombination in Highly Luminescent InP/ZnSe/ZnS Quantum Dots.高发光InP/ZnSe/ZnS量子点中的负三重态俄歇复合
Nano Lett. 2021 Mar 10;21(5):2111-2116. doi: 10.1021/acs.nanolett.0c04740. Epub 2021 Feb 26.
6
InP Quantum Dots: Synthesis and Lighting Applications.磷化铟量子点:合成与照明应用
Small. 2020 Aug;16(32):e2002454. doi: 10.1002/smll.202002454. Epub 2020 Jul 1.
7
Cation-doping matters in caesium lead halide perovskite nanocrystals: from physicochemical fundamentals to optoelectronic applications.阳离子掺杂对铯铅卤化物钙钛矿纳米晶体的影响:从物理化学基本原理到光电应用
Nanoscale. 2020 Jun 21;12(23):12228-12248. doi: 10.1039/d0nr02922j. Epub 2020 Jun 8.
8
Effect of indium alloying on the charge carrier dynamics of thick-shell InP/ZnSe quantum dots.铟合金化对厚壳InP/ZnSe量子点电荷载流子动力学的影响。
J Chem Phys. 2020 Apr 30;152(16):161104. doi: 10.1063/1.5145189.
9
Efficient Structure for InP/ZnS-Based Electroluminescence Device by Embedding the Emitters in the Electron-Dominating Interface.通过将发光体嵌入电子主导界面构建基于InP/ZnS的高效电致发光器件结构
J Phys Chem Lett. 2020 Mar 5;11(5):1835-1839. doi: 10.1021/acs.jpclett.0c00112. Epub 2020 Feb 21.
10
Fast Electron and Slow Hole Relaxation in InP-Based Colloidal Quantum Dots.基于磷化铟的胶体量子点中的快电子和慢空穴弛豫
ACS Nano. 2019 Dec 24;13(12):14408-14415. doi: 10.1021/acsnano.9b07969. Epub 2019 Dec 10.