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与动态缺陷耦合的声子的共振热霍尔效应。

Resonant thermal Hall effect of phonons coupled to dynamical defects.

作者信息

Guo Haoyu, Joshi Darshan G, Sachdev Subir

机构信息

Department of Physics, Harvard University, Cambridge, MA 02138.

School of Natural Sciences, Institute for Advanced Study, Princeton, NJ 08540.

出版信息

Proc Natl Acad Sci U S A. 2022 Nov 15;119(46):e2215141119. doi: 10.1073/pnas.2215141119. Epub 2022 Nov 11.

Abstract

We present computations of the thermal Hall coefficient of phonons scattering off a defect with multiple energy levels. Using a microscopic formulation based on the Kubo formula, we find that the leading contribution perturbative in the phonon-defect coupling is proportional to the phonon lifetime and has a "side-jump" interpretation. Consequently, the thermal Hall angle is independent of the phonon lifetime. The contribution to the thermal Hall coefficient is at resonance when the phonon energy equals a defect-level spacing. Our results are obtained for three different defect models, which apply to different correlated electron materials. For the pseudogap regime of the cuprates, we propose a model of phonons coupled to an impurity quantum spin in the presence of quasistatic magnetic order with an isotropic Zeeman coupling to the applied field and without spin-orbit interaction.

摘要

我们给出了声子在具有多个能级的缺陷上散射的热霍尔系数的计算结果。通过基于久保公式的微观公式,我们发现,在声子 - 缺陷耦合中微扰的主要贡献与声子寿命成正比,并且具有“侧跳”解释。因此,热霍尔角与声子寿命无关。当声子能量等于缺陷能级间距时,对热霍尔系数的贡献处于共振状态。我们针对三种不同的缺陷模型得到了结果,这些模型适用于不同的关联电子材料。对于铜酸盐的赝能隙区域,我们提出了一个声子与杂质量子自旋耦合的模型,该模型存在准静态磁序,与外场具有各向同性的塞曼耦合且无自旋 - 轨道相互作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85f5/9674268/bca3dcb40ead/pnas.2215141119fig01.jpg

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