用于交流和直流电学计量的石墨烯量子霍尔效应器件
Graphene Quantum Hall Effect Devices for AC and DC Electrical Metrology.
作者信息
Kruskopf Mattias, Bauer Stephan, Pimsut Yaowaret, Chatterjee Atasi, Patel Dinesh K, Rigosi Albert F, Elmquist Randolph E, Pierz Klaus, Pesel Eckart, Götz Martin, Schurr Jürgen
机构信息
Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany.
Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany; National Metrology Institute, Pathum Thani 12120, Thailand.
出版信息
IEEE Trans Electron Devices. 2021 Jul 1;68(7). doi: 10.1109/ted.2021.3082809.
Abstract
A new type of graphene-based quantum Hall standards is tested for electrical quantum metrology applications at alternating current (ac) and direct current (dc). The devices are functionalized with Cr(CO) to control the charge carrier density and have branched Hall contacts based on NbTiN superconducting material. The work is an in-depth study about the characteristic capacitances and related losses in the ac regime of the devices and about their performance during precision resistance measurements at dc and ac.
摘要
一种新型的基于石墨烯的量子霍尔标准器件在交流（ac）和直流（dc）条件下进行了电量子计量应用测试。这些器件通过Cr(CO)功能化以控制电荷载流子密度，并具有基于NbTiN超导材料的分支霍尔接触。这项工作是对器件交流 regime 中的特征电容和相关损耗以及它们在直流和交流精密电阻测量期间的性能进行的深入研究。
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Semicond Sci Technol. 2019;34(9). doi: 10.1088/1361-6641/ab37d3.
2
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3
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IEEE Trans Instrum Meas. 2018;68. doi: 10.1109/TIM.2018.2882958.
4
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Carbon N Y. 2019;142. doi: 10.1016/j.carbon.2018.10.085.
5
Epitaxial graphene for quantum resistance metrology.用于量子电阻计量的外延石墨烯。
Metrologia. 2018;55. doi: 10.1088/1681-7575/aacd23.
6
Electrical Stabilization of Surface Resistivity in Epitaxial Graphene Systems by Amorphous Boron Nitride Encapsulation.通过非晶态氮化硼封装实现外延石墨烯系统表面电阻率的电稳定化。
ACS Omega. 2017;2(5):2326-2332. doi: 10.1021/acsomega.7b00341. Epub 2017 May 25.
7
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Phys Rev B Condens Matter. 1993 Dec 15;48(24):18060-18078. doi: 10.1103/physrevb.48.18060.
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