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下一代量子化霍尔电阻标准的双端和多端设计:接触材料与几何形状

Two-Terminal and Multi-Terminal Designs for Next-Generation Quantized Hall Resistance Standards: Contact Material and Geometry.

作者信息

Kruskopf Mattias, Rigosi Albert F, Panna Alireza R, Patel Dinesh K, Jin Hanbyul, Marzano Martina, Berilla Michael, Newell David B, Elmquist Randolph E

机构信息

Department of Physics, Joint Quantum Institute, University of Maryland, College Park, MD 20742 USA.

National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.

出版信息

IEEE Trans Electron Devices. 2019;66(9). doi: 10.1109/ted.2019.2926684.

DOI:10.1109/ted.2019.2926684
PMID:32116346
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7047664/
Abstract

In this paper, we show that quantum Hall resistance measurements using two terminals may be as precise as four-terminal measurements when applying superconducting split contacts. The described sample designs eliminate resistance contributions of terminals and contacts such that the size and complexity of next-generation quantized Hall resistance devices can be significantly improved.

摘要

在本文中,我们表明,当应用超导分裂接触时,使用两个端子进行的量子霍尔电阻测量可能与四个端子测量一样精确。所描述的样品设计消除了端子和接触的电阻贡献,从而可以显著提高下一代量子化霍尔电阻器件的尺寸和复杂度。

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