Panna Alireza R, Kruskopf Mattias, Rigosi Albert F, Marzano Martina, Patel Dinesh K, Payagala Shamith U, Jarrett Dean G, Newell David B, Elmquist Randolph E
National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA.
Physikalisch-Technische Bundesanstalt, Department of Electrical Quantum Metrology, Braunschweig, 38116, Germany.
IEEE Trans Instrum Meas. 2020;1.633481E6. doi: 10.1109/CPEM49742.2020.9191753.
Precision quantum Hall resistance measurements can be greatly improved when implementing new electrical contact geometries made from superconducting NbTiN. The sample designs described here minimize undesired resistances at contacts and interconnections, enabling further enhancement of device size and complexity when pursuing next-generation quantized Hall resistance devices.
当采用由超导铌钛氮化物制成的新型电接触几何结构时，精密量子霍尔电阻测量可以得到极大改善。这里描述的样品设计将接触点和互连处的不必要电阻降至最低，在追求下一代量子化霍尔电阻器件时能够进一步增大器件尺寸并提高其复杂度。
