CNR NANOTEC Institute of Nanotechnology, Via Monteroni, Lecce 73100, Italy.
Dalton Trans. 2023 Jan 24;52(4):902-908. doi: 10.1039/d2dt03702e.
In this research work, we present a study on time-sequenced plasma-enhanced atomic layer deposition (PE-ALD) processes towards the achievement of high-quality α-MoO thin films which are suitable for exfoliation. In particular, a conventional precursor injection method along with a boosted precursor delivery approach are discussed and analysed. In the latter, the proposed gas supply mechanism ensures a large number of deposited Mo atoms per unit of time, which, along with a proper thermal energy, leads to high-quality and oriented orthorhombic α-MoO films. The proposed boosted approach is also compared with post growth annealing steps, resulting in more effective achievement of a highly oriented orthorhombic α-MoO phase and less time consumption.
在这项研究工作中,我们展示了一项关于时间序列等离子体增强原子层沉积(PE-ALD)工艺的研究,旨在实现适合剥离的高质量 α-MoO 薄膜。特别地,讨论和分析了传统的前体注入方法以及增强的前体输送方法。在后一种方法中,所提出的气体供应机制确保了单位时间内沉积的大量 Mo 原子,再加上适当的热能,得到高质量和取向的正交 α-MoO 薄膜。所提出的增强方法还与后生长退火步骤进行了比较,从而更有效地实现了高度取向的正交 α-MoO 相,并且耗时更少。