Gong Minglei, Li Wei, Fan Fei, Chen Yu, Zhang Bin
Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China.
Shanghai i-Reader Biotech Co., Ltd., Shanghai 201100, China.
Biomimetics (Basel). 2022 Dec 12;7(4):237. doi: 10.3390/biomimetics7040237.
The development of organic memory devices, regarding factors such as structure construction, principle exploration, and material design, has become a powerful supplement to traditional silicon-based information storage. The in-situ growth of materials on substrate surfaces can achieve closer bonding between materials and electrodes. Bio-inspired by mussel chemistry, polydopamine (PDA) was self-assembled on a flexible substrate as a connecting layer, and 2-bromoiso-butyryl bromide (BiBB) was utilized as an initiator for the polymerization of an iridium complex via surface-initiated atom-transfer radical polymerization (SI-ATRP). A device with the structure of Al/PDA-PPyIr/ITO was constructed after the deposition of aluminum. The device exhibited a nonvolatile rewritable memory characteristic with a turn-on voltage of -1.0 V and an ON/OFF current ratio of 6.3 × 10. In addition, the memory performance of the Al/PDA-PPyIr/ITO device remained stable at bending states due to the intrinsic flexibility of the active layer, which can be expanded into the establishment of flexible memory devices. Spectroscopy and electrochemical characterization suggested that the resistive memory properties of the device stemmed from charge transfer between PDA and iridium polymer in the active layer (PDA-PPyIr) under an applied voltage.
在结构构建、原理探索和材料设计等因素方面,有机存储器件的发展已成为传统硅基信息存储的有力补充。材料在衬底表面的原位生长能够实现材料与电极之间更紧密的结合。受贻贝化学启发,聚多巴胺(PDA)作为连接层自组装在柔性衬底上,2-溴异丁酰溴(BiBB)用作引发剂,通过表面引发的原子转移自由基聚合(SI-ATRP)引发铱配合物的聚合反应。在沉积铝之后,构建了具有Al/PDA-PPyIr/ITO结构的器件。该器件表现出非易失性可重写存储特性,开启电压为-1.0 V,开/关电流比为6.3×10。此外,由于活性层固有的柔韧性,Al/PDA-PPyIr/ITO器件在弯曲状态下的存储性能保持稳定,这可扩展到柔性存储器件的制备。光谱和电化学表征表明,该器件的电阻式存储特性源于施加电压下活性层(PDA-PPyIr)中PDA与铱聚合物之间的电荷转移。