Gastellóu Erick, García Rafael, Herrera Ana M, Ramos Antonio, García Godofredo, Robles Mario, Rodríguez Jorge A, Ramírez Yani D, Carrillo Roberto C
División de Sistemas Automotrices, Universidad Tecnológica de Puebla (UTP), Puebla C.P. 72300, Puebla, Mexico.
Departamento de Investigación en Física, Universidad de Sonora (UNISON), Hermosillo C.P. 83000, Sonora, Mexico.
Entropy (Basel). 2022 Nov 23;24(12):1711. doi: 10.3390/e24121711.
This work presents the theoretical calculation of isotherm diagrams for quaternary alloys of III-V semiconductor compounds with the form IIIIIIVV. In particular, the isotherm diagrams for the AlGaAsSb quaternary alloy at low temperatures were calculated (500 °C, 450 °C, 400 °C, and 350 °C). The AlGaAsSb quaternary alloy was formed from four binary compounds such as GaAs, AlAs, AlSb, and GaSb, all with direct bandgaps. The regular solution approximation was used to find the quaternary isotherm diagrams, represented in four linearly independent equations, which were solved using Parametric Technology Corporation Mathcad 14.0 software for different arsenic and antimony atomic fractions. The results support the possible growth of layers via liquid-phase epitaxy in a range of temperatures from 500 °C to 350 °C, where the crystalline quality could be improved at low temperatures. These semiconductor layers could have applications for optoelectronic devices in photonic communications, thermophotovoltaic systems, and microwave devices with good crystalline quality.
本文介绍了具有IIIIIIVV形式的III-V族半导体化合物四元合金等温线图的理论计算。具体而言，计算了低温下（500°C、450°C、400°C和350°C）AlGaAsSb四元合金的等温线图。AlGaAsSb四元合金由四种二元化合物GaAs、AlAs、AlSb和GaSb形成，它们都具有直接带隙。采用正规溶液近似法来求解四元等温线图，这些等温线图由四个线性独立方程表示，使用参数技术公司的Mathcad 14.0软件针对不同的砷和锑原子分数进行求解。结果表明，在500°C至350°C的温度范围内，通过液相外延可能生长出层，其中在低温下晶体质量可以得到改善。这些半导体层可应用于光子通信、热光伏系统和具有良好晶体质量的微波器件中的光电器件。
