Shupenev Alexander E, Melnik Svetlana L, Korshunov Ivan S, Karpoukhin Sergey D, Sazonkin Stanislav G, Grigor'yants Alexander G
Department of Laser Technology in Engineering, Bauman Moscow State Technical University, 105005 Moscow, Russia.
Department of Materials Science, Bauman Moscow State Technical University, 105005 Moscow, Russia.
Materials (Basel). 2022 Dec 16;15(24):8993. doi: 10.3390/ma15248993.
Thermoelectric materials in the form of thin films are used to create a wide variety of sensors and devices. The efficiency of these devices depends on the quality and efficiency of the thermoelectric materials obtained in the form of thin films. Earlier, we demonstrated that it is possible to obtain high-performance BiTeSb films less than 1 μm thick on polyimide substrates by using the PLD method, and determined optimal growth conditions. In the current work, the relationship between growth conditions and droplet fraction on the surface, microstructure, grain size, film thickness and chemical composition was studied. A power factor of 5.25 μW/cm×K was achieved with the reduction of droplet fraction on the film surface to 0.57%. The dependencies of the film thickness were studied, and the effect of the thickness on the efficiency of the material is shown. The general trend in the growth dynamics for BiTeSb films we obtained is the reduction of crystalline size with Pressure-Temperature (PT) criterion. The results of our work also show the possibility of a significant reduction of droplet phase with simultaneous management of crystalline features and thermoelectric efficiency of BiTeSb films grown on polyimide substrates by varying growth conditions.
薄膜形式的热电材料被用于制造各种各样的传感器和器件。这些器件的效率取决于以薄膜形式获得的热电材料的质量和效率。此前，我们证明了通过脉冲激光沉积（PLD）方法可以在聚酰亚胺衬底上获得厚度小于1μm的高性能BiTeSb薄膜，并确定了最佳生长条件。在当前工作中，研究了生长条件与表面液滴分数、微观结构、晶粒尺寸、薄膜厚度和化学成分之间的关系。随着薄膜表面液滴分数降低至0.57%，实现了5.25 μW/cm×K的功率因子。研究了薄膜厚度的依赖性，并展示了厚度对材料效率的影响。我们获得的BiTeSb薄膜生长动力学的总体趋势是随着压力-温度（PT）准则晶体尺寸减小。我们的工作结果还表明，通过改变生长条件，可以在控制聚酰亚胺衬底上生长的BiTeSb薄膜的晶体特征和热电效率的同时，显著减少液滴相。
