Mishra Bhagyashree, Chen Yihong Maggie
Materials Science, Engineering, and Commercialization, Texas State University, San Marcos, TX 78666, USA.
Ingram School of Engineering, Texas State University, San Marcos, TX 78666, USA.
Nanomaterials (Basel). 2022 Dec 19;12(24):4487. doi: 10.3390/nano12244487.
The printability of reliable gate dielectrics and their influence on the stability of the device are some of the primary concerns regarding the practical application of printed transistors. Major ongoing research is focusing on the structural properties of dielectric materials and deposition parameters to reduce interface charge traps and hysteresis caused by the dielectric-semiconductor interface and dielectric bulk. This research focuses on improving the dielectric properties of a printed polymer material, cross-linked polyvinyl phenol (crPVP), by optimizing the cross-linking parameters as well as the aerosol jet printability. These improvements were then applied to the fabrication of completely printed carbon nanotube (CNT)-based thin-film transistors (TFT) to reduce the gate threshold voltage (V) and hysteresis in V during device operation. Finally, a fully aerosol-jet-printed CNT device was demonstrated using a 2:1 weight ratio of PVP with the cross-linker poly(melamine-co-formaldehyde) methylated (PMF) in crPVP as the dielectric material. This device shows significantly less hysteresis and can be operated at a gate threshold voltage as low as -4.8 V with an on/off ratio of more than 10.
可靠的栅极电介质的可印刷性及其对器件稳定性的影响是印刷晶体管实际应用中的一些主要问题。当前主要的研究集中在介电材料的结构特性和沉积参数上，以减少由介电 - 半导体界面和介电体引起的界面电荷陷阱和滞后现象。本研究致力于通过优化交联参数和气溶胶喷射可印刷性来改善一种印刷聚合物材料——交联聚乙烯基苯酚（crPVP）的介电性能。然后将这些改进应用于完全印刷的基于碳纳米管（CNT）的薄膜晶体管（TFT）的制造中，以降低器件运行期间的栅极阈值电压（V）和V中的滞后现象。最后，使用在crPVP中作为介电材料的PVP与交联剂聚（三聚氰胺 - 共 - 甲醛）甲基化（PMF）的2:1重量比，展示了一种完全通过气溶胶喷射印刷的CNT器件。该器件显示出明显更少的滞后现象，并且可以在低至 - 4.8 V的栅极阈值电压下运行，开/关比超过10。
