• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

基于生物阈值电阻式随机存取存储器的人工神经突触的实现。

Realization of Artificial Nerve Synapses Based on Biological Threshold Resistive Random Access Memory.

机构信息

School of Electronic Engineering, Heilongjiang University, Harbin, 150080, P. R. China.

出版信息

Adv Biol (Weinh). 2023 Jun;7(6):e2200298. doi: 10.1002/adbi.202200298. Epub 2023 Jan 17.

DOI:10.1002/adbi.202200298
PMID:36650948
Abstract

A one-selector one resistor (1S1R) array formed of a selector and resistive random access memory (RRAM) is an important way to achieve high-density storage and neuromorphic computing. However, the low durability and poor consistency of the selector limit its practical application. The fabrication of a selector based on egg albumen (EA) is reported in this paper. The device exhibits excellent bidirectional threshold switching characteristics, including a low leakage current (10  A), a high ON/OFF current ratio (10 ), and good endurance (>700 days). It is used as a selector to form a 1S1R unit in combination with an EA-based RRAM to effectively solve the leakage current in a crossbar array. A feasible solution is provided for the realization of a protein-based 1S1R array to achieve high-density storage. The 1S1R unit shows characteristics similar to those of synapses in the human brain under impulse excitation and has great potential in simulating the human brain for neuromorphic calculations.).

摘要

由选择器和电阻式随机存取存储器 (RRAM) 组成的单选择器单电阻器 (1S1R) 阵列是实现高密度存储和神经形态计算的重要途径。然而,选择器的低耐久性和差的一致性限制了其实际应用。本文报道了一种基于蛋清 (EA) 的选择器的制造。该器件表现出优异的双向阈值开关特性,包括低泄漏电流 (10  A)、高导通/截止电流比 (10 ) 和良好的耐久性 (>700 天)。它被用作选择器,与基于 EA 的 RRAM 结合形成 1S1R 单元,可有效解决交叉阵列中的泄漏电流问题。为实现基于蛋白质的 1S1R 阵列以实现高密度存储提供了可行的解决方案。1S1R 单元在脉冲激励下表现出类似于人脑突触的特性,在用于神经形态计算的模拟人脑方面具有巨大的潜力。

相似文献

1
Realization of Artificial Nerve Synapses Based on Biological Threshold Resistive Random Access Memory.基于生物阈值电阻式随机存取存储器的人工神经突触的实现。
Adv Biol (Weinh). 2023 Jun;7(6):e2200298. doi: 10.1002/adbi.202200298. Epub 2023 Jan 17.
2
High-Uniformity Threshold Switching HfO-Based Selectors with Patterned Ag Nanodots.具有图案化银纳米点的高均匀性阈值开关氧化铪基选择器。
Adv Sci (Weinh). 2020 Oct 8;7(22):2002251. doi: 10.1002/advs.202002251. eCollection 2020 Nov.
3
Thermally stable threshold selector based on CuAg alloy for energy-efficient memory and neuromorphic computing applications.基于铜银合金的热稳定阈值选择器,用于节能型存储和神经形态计算应用。
Nat Commun. 2023 Jun 6;14(1):3285. doi: 10.1038/s41467-023-39033-z.
4
Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays.基于超薄金属氧化物的自对准选择器用于电阻式随机存取存储器(RRAM)交叉阵列的建模
Nanomaterials (Basel). 2024 Apr 12;14(8):668. doi: 10.3390/nano14080668.
5
One-Selector-One-Resistor Integrated Memory Cells Based on Two-Dimensional Heterojunction Memory Selectors.基于二维异质结存储选择器的单选择器单电阻集成存储单元
ACS Nano. 2024 Oct 15;18(41):28292-28300. doi: 10.1021/acsnano.4c09421. Epub 2024 Oct 4.
6
Investigating Selectorless Property within Niobium Devices for Storage Applications.研究用于存储应用的铌器件中的无选择器特性。
ACS Appl Mater Interfaces. 2022 Jan 12;14(1):2343-2350. doi: 10.1021/acsami.1c20460. Epub 2022 Jan 3.
7
Frequency-Dependent Synapse Weight Tuning in 1S1R with a Short-Term Plasticity TiO-Based Exponential Selector.具有短期可塑性基于二氧化钛的指数选择器的1S1R中频率依赖性突触权重调谐
ACS Appl Mater Interfaces. 2022 Aug 10;14(31):35959-35968. doi: 10.1021/acsami.2c11016. Epub 2022 Jul 27.
8
A new bipolar RRAM selector based on anti-parallel connected diodes for crossbar applications.一种基于反并联二极管的新型双极电阻式随机存取存储器(RRAM)选择器,用于交叉开关应用。
Nanotechnology. 2014 May 9;25(18):185201. doi: 10.1088/0957-4484/25/18/185201. Epub 2014 Apr 15.
9
Conduction mechanism of a TaO(x)-based selector and its application in crossbar memory arrays.基于TaO(x)的选择器的传导机制及其在交叉开关存储器阵列中的应用。
Nanoscale. 2015 Mar 21;7(11):4964-70. doi: 10.1039/c4nr06922f.
10
High-performance resistive random access memory using two-dimensional electron gas electrode and its switching mechanism analysis.使用二维电子气电极的高性能电阻式随机存取存储器及其开关机制分析。
Nanotechnology. 2023 Oct 27;35(2). doi: 10.1088/1361-6528/ad02a2.

引用本文的文献

1
Starch-Glycerol-Based Hydrogel Memristors for Bio-Inspired Auditory Neuron Applications.用于仿生听觉神经元应用的基于淀粉-甘油的水凝胶忆阻器
Gels. 2025 Jun 1;11(6):423. doi: 10.3390/gels11060423.
2
An overview of critical applications of resistive random access memory.电阻式随机存取存储器的关键应用概述。
Nanoscale Adv. 2024 Sep 9;6(20):4980-5006. doi: 10.1039/d4na00158c.