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MgO(001) 衬底上单层 FeSe 薄膜中的界面增强超导性:原子替代引起的电荷转移

Interface enhanced superconductivity in monolayer FeSe films on MgO(001): charge transfer with atomic substitution.

作者信息

Zhou Guanyu, Zhang Qinghua, Zheng Fawei, Zhang Ding, Liu Chong, Wang Xiaoxiao, Song Can-Li, He Ke, Ma Xu-Cun, Gu Lin, Zhang Ping, Wang Lili, Xue Qi-Kun

机构信息

State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.

Laboratory for Advanced Materials & Electron Microscopy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

出版信息

Sci Bull (Beijing). 2018 Jun 30;63(12):747-752. doi: 10.1016/j.scib.2018.05.016. Epub 2018 May 25.

Abstract

Interface enhanced superconductivity over 50 K has been discovered in monolayer FeSe films grown on several TiO-terminated oxide substrates. Whether such phenomenon exists in other oxide substrates remains an extremely interesting topic. Here we report enhanced superconductivity with an onset transition temperature of 18 K in monolayer FeSe on MgO(001) substrate by transport measurement. Scanning transmission electron microscopy investigation on the interface structure indicates that FeSe films grow epitaxially on MgO(001) and that overlayer Fe atoms diffuse into the top two layers of MgO and substitute Mg atoms. Our density functional theory calculations reveal that this substitution promotes the charge transfer from the MgO substrate to the FeSe films, an essential process that also occurs in monolayer FeSe on TiO-terminated oxides and contributes to the enhanced superconductivity therein. Our finding suggests that superconductivity enhancement in monolayer FeSe films on oxides substrates is rather general as long as charge transfer is allowed at the interface, thus pointing out an explicit direction for searching for new high temperature superconductivity by interface engineering.

摘要

在几种TiO端接的氧化物衬底上生长的单层FeSe薄膜中发现了超过50K的界面增强超导性。这种现象是否存在于其他氧化物衬底中仍然是一个极其有趣的课题。在此,我们通过输运测量报告了在MgO(001)衬底上的单层FeSe中起始转变温度为18K的增强超导性。对界面结构的扫描透射电子显微镜研究表明,FeSe薄膜在MgO(001)上外延生长,并且覆盖层Fe原子扩散到MgO的最上面两层并替代Mg原子。我们的密度泛函理论计算表明,这种替代促进了从MgO衬底到FeSe薄膜的电荷转移,这一基本过程也发生在TiO端接的氧化物上的单层FeSe中,并有助于其中的超导性增强。我们的发现表明,只要界面允许电荷转移,氧化物衬底上的单层FeSe薄膜中的超导性增强就相当普遍,从而为通过界面工程寻找新的高温超导性指明了一个明确的方向。

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