Kim Tae Hyeong, Kang Dongchan, Kim Jeong Nyeon, Park Ik Keun
Graduate School of Energy and Environment, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 01811, Republic of Korea.
SeoulTech NDT Research Center (SNDT), Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 01811, Republic of Korea.
Materials (Basel). 2023 Jan 16;16(2):860. doi: 10.3390/ma16020860.
In this study, an ultra-high-resolution acoustic microscopy system capable of non-destructively evaluating defects that may occur in thin film structures was fabricated. It is an integrated system of the control module, activation module, and data acquisition system, in which an integrated control software for controlling each module was developed. The control module includes the mechanical, control, and ultrasonic parts. The activation module was composed of the pulser/receiver, and the data acquisition system included an A/D board. In addition, the integrated control software performs system operation and material measurement and includes an analysis program to analyze the obtained A-Scan signals in various ways. A through-silicon via (TSV) device, which is a semiconductor structure, was prepared to verify the performance of the developed system. The TSV device was analyzed using an ultra-high-resolution acoustic microscope. When the C-Scan images were analyzed, void defects with a size of 20 μm were detected at a depth of approximately 32.5 μm. A similar result could be confirmed when the cross section was measured using focused ion beam (FIB) microscopy.
在本研究中，制造了一种能够对薄膜结构中可能出现的缺陷进行无损评估的超高分辨率声学显微镜系统。它是控制模块、激活模块和数据采集系统的集成系统，其中开发了用于控制每个模块的集成控制软件。控制模块包括机械、控制和超声部分。激活模块由脉冲发生器/接收器组成，数据采集系统包括一个A/D板。此外，集成控制软件执行系统操作和材料测量，并包括一个分析程序，用于以各种方式分析获得的A扫描信号。制备了一种作为半导体结构的硅通孔（TSV）器件，以验证所开发系统的性能。使用超高分辨率声学显微镜对TSV器件进行了分析。在分析C扫描图像时，在约32.5μm的深度处检测到尺寸为20μm的空洞缺陷。当使用聚焦离子束（FIB）显微镜测量横截面时，可以得到类似的结果。
