Xu Ru, Chen Peng, Zhou Jing, Li Yimeng, Li Yuyin, Zhu Tinggang, Cheng Kai, Chen Dunjun, Xie Zili, Ye Jiandong, Liu Bin, Xiu Xiangqian, Han Ping, Shi Yi, Zhang Rong, Zheng Youdou
The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033, P. R. China.
Corenergy Semiconductor Incorporation, Suzhou, 215600, P. R. China.
Small. 2022 Sep;18(37):e2107301. doi: 10.1002/smll.202107301. Epub 2022 Jul 22.
GaN-based lateral Schottky barrier diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from exploiting the material advantages of GaN at present, limiting the desire to use GaN for ultra-high voltage (UHV) applications. Then, a golden question is whether the excellent properties of GaN-based materials can be practically used in the UHV field? Here, UHV AlGaN/GaN SBDs are demonstrated on sapphire with a BV of 10.6 kV, a specific on-resistance (R ) of 25.8 mΩ cm , yielding a power figure-of-merit (P-FOM = BV /R ) of 4.35 GW cm . These devices are designed with single channel and 85-µm anode-to-cathode spacing, without other additional electric field management, demonstrating its great potential for the UHV application in power electronics.
基于氮化镓的横向肖特基势垒二极管（SBD）因其兼具高电子迁移率和大临界击穿场而在高功率应用中备受关注。然而，目前SBD的击穿电压（BV）远未充分发挥氮化镓的材料优势，限制了将氮化镓用于超高压（UHV）应用的意愿。那么，一个关键问题是基于氮化镓的材料的优异性能能否在超高压领域得到实际应用？在此，在蓝宝石上展示了超高压AlGaN/GaN SBD，其BV为10.6 kV，比导通电阻（R ）为25.8 mΩ·cm ，功率优值（P-FOM = BV /R ）为4.35 GW·cm 。这些器件采用单通道设计，阳极到阴极间距为85 µm，无需其他额外的电场管理，展示了其在电力电子超高压应用中的巨大潜力。
