Zhu Zhifang, Tao Tao, Liu Bin, Zhi Ting, Chen Yang, Yu Junchi, Jiang Di, Xu Feifan, Sang Yimeng, Yan Yu, Xie Zili, Zhang Rong
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China.
Micromachines (Basel). 2022 Dec 21;14(1):10. doi: 10.3390/mi14010010.
GaN-based Micro-LED has been widely regarded as the most promising candidate for next generation of revolutionary display technology due to its advantages of high efficiency, high brightness and high stability. However, the typical micro-fabrication process would leave a great number of damages on the sidewalls of LED pixels, especially for Micro-LEDs, thus reducing the light emitting efficiency. In this paper, sidewall passivation methods were optimized by using acid-base wet etching and SiO layer passivation. The optical and electrical characteristics of optimized Micro-LEDs were measured and analyzed. The internal quantum efficiency (IQE) of Micro-LED was increased to 85.4%, and the reverse leakage current was reduced down to 10 A at -5 V. Optimized sidewall passivation can significantly reduce the non-radiative recombination centers, improving the device performance and supporting the development of high-resolution Micro-LED display.
基于氮化镓的微型发光二极管（Micro-LED）因其具有高效率、高亮度和高稳定性等优点，被广泛认为是下一代革命性显示技术最有前途的候选者。然而，典型的微制造工艺会在LED像素的侧壁上留下大量损伤，尤其是对于微型发光二极管（Micro-LED）而言，从而降低发光效率。在本文中，通过酸碱湿法蚀刻和SiO层钝化对侧壁钝化方法进行了优化。对优化后的微型发光二极管（Micro-LED）的光学和电学特性进行了测量和分析。微型发光二极管（Micro-LED）的内部量子效率（IQE）提高到了85.4%，在-5V时反向漏电流降低到10A。优化后的侧壁钝化可以显著减少非辐射复合中心，提高器件性能，并支持高分辨率微型发光二极管（Micro-LED）显示器的发展。
