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大尺寸碳化硅单晶材料与器件的研究进展

Research progress of large size SiC single crystal materials and devices.

作者信息

Chen Xiufang, Yang Xianglong, Xie Xuejian, Peng Yan, Xiao Longfei, Shao Chen, Li Huadong, Hu Xiaobo, Xu Xiangang

机构信息

State Key Laboratory of Crystal Materials, Institute of novel semiconductors, Shandong University, Jinan, 250100, China.

出版信息

Light Sci Appl. 2023 Jan 24;12(1):28. doi: 10.1038/s41377-022-01037-7.

DOI:10.1038/s41377-022-01037-7
PMID:36693852
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9873793/
Abstract

SiC semiconductor is the focus of recent international research. It is also an important raw material for China to achieve carbon emission peak and carbon neutrality. After nearly 20 years of research and development, we focus on the three types SiC crystals, n-type, p-type and semi-insulating, indicating the development of Shandong University for crystal growth. And defects control, electrical property, atomic polishing, and corresponding device authentication all obtain great progress. Total dislocation density of 6-inch n-type substrates decreases to 2307 cm, where BPD (Basal Plane Dislocation) lowers to 333 cm and TSD (Threading Screw Dislocation) 19 cm. The full width at half maximum (FWHM) (0004) rocking curves is only 14.4 arcsec. The resistivity reaches more than 1E + 12 Ω·cm for semi-insulating SiC and lower than 20 mΩ·cm for n-type SiC. The impurity concentrations in 6-inch high-purity semi-insulating (HPSI) SiC crystals reach extreme low levels. The devices made of various substrate materials have good performance.

摘要

碳化硅半导体是近期国际研究的焦点。它也是中国实现碳达峰和碳中和的重要原材料。经过近20年的研发，我们专注于n型、p型和半绝缘三种类型的碳化硅晶体，这表明山东大学在晶体生长方面的发展。并且在缺陷控制、电学性能、原子抛光以及相应的器件验证方面均取得了巨大进展。6英寸n型衬底的总位错密度降至2307 cm，其中基面位错（BPD）降至333 cm，螺纹位错（TSD）为19 cm。（0004）摇摆曲线的半高宽（FWHM）仅为14.4 弧秒。半绝缘碳化硅的电阻率达到1E + 12Ω·cm以上，n型碳化硅的电阻率低于20 mΩ·cm。6英寸高纯度半绝缘（HPSI）碳化硅晶体中的杂质浓度达到极低水平。由各种衬底材料制成的器件具有良好的性能。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4722/9873793/0478158697b5/41377_2022_1037_Fig10_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4722/9873793/0478158697b5/41377_2022_1037_Fig10_HTML.jpg

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