Yu Dongxing, Yang Hongxin, Chshiev Mairbek, Fert Albert
Quantum Functional Materials Laboratory, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Natl Sci Rev. 2022 Feb 18;9(12):nwac021. doi: 10.1093/nsr/nwac021. eCollection 2022 Dec.
Logic gates based on magnetic elements are promising candidates for logic-in-memory applications with non-volatile data retention, near-zero leakage and scalability. In such spin-based logic devices, however, the multi-strip structure and fewer functions are obstacles to improving integration and reducing energy consumption. Here we propose a skyrmions-based single-nanotrack logic family including AND, OR, NOT, NAND, NOR, XOR and XNOR that can be implemented and reconstructed by building and switching the Dzyaloshinskii-Moriya interaction (DMI) chirality barrier on a racetrack memory. Besides the pinning effect of the DMI chirality barrier on skyrmions, the annihilation, fusion and shunting of two skyrmions with opposite chirality are also achieved and demonstrated via local reversal of the DMI, which are necessary for the design of an engineer programmable logic nanotrack, transistor and complementary racetrack memory.
基于磁性元件的逻辑门是实现非易失性数据存储、近零泄漏和可扩展性的内存逻辑应用的有前途的候选方案。然而，在这种基于自旋的逻辑器件中，多带结构和较少的功能是提高集成度和降低能耗的障碍。在此，我们提出了一种基于斯格明子的单纳米轨道逻辑系列，包括与门、或门、非门、与非门、或非门、异或门和同或门，它们可以通过在赛道存储器上构建和切换Dzyaloshinskii-Moriya相互作用（DMI）手性势垒来实现和重构。除了DMI手性势垒对斯格明子的钉扎效应外，还通过DMI的局部反转实现并演示了两个具有相反手性的斯格明子的湮灭、融合和分流，这对于设计工程师可编程逻辑纳米轨道、晶体管和互补赛道存储器是必要的。
