Belrhazi Hamza, Fattouhi Mouad, El Hafidi M Youssef, El Hafidi Mohamed
Condensed Matter Physics Laboratory, Department of Physics, Faculty of Science Ben M'sik, Hassan II University of Casablanca, D. El Harty Av., B.P 7955, 20165 Casablanca, Morocco.
Department of Applied Physics, University of Salamanca, 37008 Salamanca, Spain.
ACS Appl Mater Interfaces. 2024 Jan 24;16(3):3703-3718. doi: 10.1021/acsami.3c16542. Epub 2024 Jan 12.
Herein, we investigate the behavior of skyrmions within a racetrack design incorporating voltage-controlled magnetic anisotropy (VCMA) gates. Our analysis encompassed multiple forces, including spin currents and anisotropy gradients induced by bias voltages. As a result, the efficient control of skyrmion dynamics was achieved across various VCMA gate configurations. Building upon these findings, we propose an efficient approach to reconfigurable skyrmion logic (RSL) in a thin antiferromagnetic (AFM) film through a versatile design. Our RSL harnesses the selective integration of VCMA, spin-polarized currents, and skyrmion-skyrmion (sky-sky) interactions to implement multiple logic gates, including AND, OR, XOR, NOT, NAND, XNOR, and NOR. The design brings a significant advantage with its simplified fabrication process, making the implementation of the RSL practical and accessible for various applications. Furthermore, the RSL enables seamless dynamic switching between logic gates, thereby enhancing its multifunctionality. Additionally, the strategic incorporation of sky-sky interactions and skyrmion-edge repulsion prominently facilitates the realization of complex gates, such as NAND, XNOR, and NOR gates, that typically require intricate design efforts. Hence, this streamlined integration of RSL, coupled with its adaptability to changing computational needs, underscores its potential as a practical solution for implementing high-functionality skyrmion-based logic gates.
在此，我们研究了在包含电压控制磁各向异性（VCMA）门的跑道设计中斯格明子的行为。我们的分析涵盖了多种力，包括偏置电压引起的自旋电流和各向异性梯度。结果，在各种VCMA门配置中实现了对斯格明子动力学的有效控制。基于这些发现，我们通过一种通用设计提出了一种在薄反铁磁（AFM）薄膜中实现可重构斯格明子逻辑（RSL）的有效方法。我们的RSL利用VCMA、自旋极化电流和斯格明子 - 斯格明子（sky - sky）相互作用的选择性整合来实现多个逻辑门，包括与门、或门、异或门、非门、与非门、同或门和或非门。该设计因其简化的制造工艺带来了显著优势，使得RSL的实现对于各种应用而言既实用又可行。此外，RSL能够在逻辑门之间实现无缝动态切换，从而增强了其多功能性。此外，sky - sky相互作用和斯格明子 - 边缘排斥的策略性引入显著促进了复杂门（如与非门、同或门和或非门）的实现，这些复杂门通常需要复杂的设计工作。因此，RSL的这种简化整合及其对不断变化的计算需求的适应性，突出了其作为实现基于斯格明子的高功能逻辑门的实用解决方案的潜力。
