Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan.
Center of Atomic Initiative for New Materials, National Taiwan University, Taipei 106, Taiwan.
ACS Nano. 2023 Feb 14;17(3):2653-2660. doi: 10.1021/acsnano.2c10631. Epub 2023 Jan 30.
Contact doping is considered crucial for reducing the contact resistance of two-dimensional (2D) transistors. However, a process for achieving robust contact doping for 2D electronics is lacking. Here, we developed a two-step doping method for effectively doping 2D materials through a defect-repairing process. The method achieves strong and hysteresis-free doping and is suitable for use with the most widely used transition-metal dichalcogenides. Through our method, we achieved a record-high sheet conductance (0.16 mS·sq without gating) of monolayer MoS and a high mobility and carrier concentration (4.1 × 10 cm). We employed our robust method for the successful contact doping of a monolayer MoS Au-contact device, obtaining a contact resistance as low as 1.2 kΩ·μm. Our method represents an effective means of fabricating high-performance 2D transistors.
接触掺杂被认为是降低二维（2D）晶体管接触电阻的关键。然而，缺乏用于实现 2D 电子器件稳健接触掺杂的工艺。在这里，我们开发了一种两步掺杂方法，通过缺陷修复过程有效地掺杂 2D 材料。该方法实现了强且无迟滞的掺杂，并且适用于最广泛使用的过渡金属二卤化物。通过我们的方法，我们实现了单层 MoS 的创纪录的高面电导率（无门控时为 0.16 mS·sq）和高迁移率和载流子浓度（4.1×10 cm）。我们在单层 MoS 与 Au 接触器件的成功接触掺杂中采用了我们稳健的方法，获得了低至 1.2 kΩ·μm 的接触电阻。我们的方法代表了制造高性能 2D 晶体管的有效手段。
