Chou Sui-An, Chang Chen, Wu Bo-Hong, Chuu Chih-Piao, Kuo Pai-Chia, Pan Liang-Hsuan, Huang Kai-Chun, Lai Man-Hong, Chen Yi-Feng, Lee Che-Lun, Chen Hao-Yu, Shiue Jessie, Chang Yu-Ming, Li Ming-Yang, Chiu Ya-Ping, Chen Chun-Wei, Ho Po-Hsun
Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
Department of Materials Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan.
Nat Commun. 2025 Mar 21;16(1):2777. doi: 10.1038/s41467-025-57986-1.
The development of p-type WSe transistors has lagged behind n-type MoS because of challenges in growing high-quality, large-area WSe films. This study employs an alkali-assisted CVD (AACVD) method by using KOH to enhance nucleation on sapphire substrates, effectively promoting monolayer growth on c-plane sapphire and enabling controlled bilayer seeding on miscut surfaces with artificial steps. With AACVD, we achieve 2-inch monolayer and centimeter-scale bilayer WSe films with defect densities as low as 1.6 × 10cm (monolayer) and 1.8 × 10cm (bilayer), comparable to exfoliated WSe. Bilayer WSe transistors exhibit hole/electron mobilities of 119/34 cm²/Vs, while monolayers achieve 105/22 cm²/Vs with suitable metal contacts. Additionally, bilayer WSe demonstrates lower contact resistance for both n-type and p-type transistors, making it highly promising for future high-performance electronic applications.
由于在生长高质量、大面积的WSe薄膜方面存在挑战，p型WSe晶体管的发展落后于n型MoS。本研究采用碱辅助化学气相沉积（AACVD）方法，通过使用KOH增强在蓝宝石衬底上的成核，有效促进在c面蓝宝石上的单层生长，并在具有人工台阶的错切表面上实现可控的双层播种。通过AACVD，我们获得了2英寸的单层和厘米级的双层WSe薄膜，其缺陷密度低至1.6×10/cm（单层）和1.8×10/cm（双层），与剥离的WSe相当。双层WSe晶体管的空穴/电子迁移率为119/34 cm²/Vs，而单层在合适的金属接触下达到105/22 cm²/Vs。此外，双层WSe对n型和p型晶体管均表现出较低的接触电阻，这使其在未来高性能电子应用中极具前景。
