Zulkifli Nur 'Adnin Akmar, Zahir Nor Hilmi, Abdullah Ripain Atiena Husna, Said Suhana Mohd, Zakaria Rozalina
Photonic Research Centre, University Malaya 50603 Kuala Lumpur Malaysia
Low Dimensional Material Research Center (LDMRC), Physics Dept. Faculty of Science, University Malaya 50603 Kuala Lumpur Malaysia.
Nanoscale Adv. 2023 Jan 10;5(3):879-892. doi: 10.1039/d2na00756h. eCollection 2023 Jan 31.
Molybdenum disulfide (MoS) has been attracting considerable attention due to its excellent electrical and optical properties. We successfully grew high-quality, large-area and uniform few-layer (FL)-MoS on p-doped gallium nitride (p-GaN) using a simplified sulfurization technique by the single-zone CVD of a Mo seed layer E-beam evaporation. Tuning the sulfurization parameters, namely temperature and duration, has been discovered to be an effective strategy for improving MoS orientation (horizontally aligned and vertically aligned) and quality, which affects photodetector (PD) performance. The increase in the sulfurization temperature to 850 °C results in improved structural quality and crystallite size. However, a prolonged sulfurization duration of 60 minutes caused the degradation of the film quality. The close lattice match between p-GaN and MoS contributes to the excellent quality growth of deposited MoS. Following this, an n-MoS/p-GaN heterostructure PD was successfully built by a MoS position-selectivity method. We report a highly sensitive and self-powered GaN/MoS p-n heterojunction PD with a relatively high responsivity of 14.3 A W, a high specific detectivity of 1.12 × 10 Jones, and a fast response speed of 8.3/13.4 μs (20 kHz) under a UV light of 355 nm at zero-bias voltage. Our PD exhibits superior performance to that of the previously reported MoS/GaN p-n PD. Our findings suggest a more efficient and straightforward approach to building high-performance self-powered UV PDs.
二硫化钼（MoS₂）因其优异的电学和光学性能而备受关注。我们通过一种简化的硫化技术，即利用钼籽层的单区化学气相沉积（CVD）和电子束蒸发，成功地在p型掺杂氮化镓（p-GaN）上生长出高质量、大面积且均匀的少层（FL）-MoS₂。研究发现，调节硫化参数，即温度和持续时间，是改善MoS₂取向（水平取向和垂直取向）和质量的有效策略，而这会影响光电探测器（PD）的性能。将硫化温度提高到850°C可提高结构质量和微晶尺寸。然而，60分钟的延长硫化时间会导致薄膜质量下降。p-GaN和MoS₂之间紧密的晶格匹配有助于沉积的MoS₂实现优异的质量生长。在此基础上，通过MoS₂位置选择性方法成功构建了n-MoS₂/p-GaN异质结构光电探测器。我们报道了一种高灵敏度、自供电的GaN/MoS₂ p-n异质结光电探测器，在355 nm紫外光、零偏压下，其具有相对较高的响应度14.3 A/W、高比探测率1.12×10¹² Jones以及8.3/13.4 μs（20 kHz）的快速响应速度。我们的光电探测器表现出优于先前报道的MoS₂/GaN p-n光电探测器的性能。我们的研究结果表明了一种构建高性能自供电紫外光电探测器的更高效、直接的方法。
