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氧化物超薄薄膜中二维范霍夫奇点的电控。

Electric Control of 2D Van Hove Singularity in Oxide Ultra-Thin Films.

机构信息

Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea.

Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea.

出版信息

Adv Mater. 2023 Apr;35(17):e2207188. doi: 10.1002/adma.202207188. Epub 2023 Mar 20.

Abstract

Divergent density of states (DOS) can induce extraordinary phenomena such as significant enhancement of superconductivity and unexpected phase transitions. Moreover, van Hove singularities (VHSs) lead to divergent DOS in 2D systems. Despite recent interest in VHSs, only a few controllable cases have been reported to date. In this work, by utilizing an atomically ultra-thin SrRuO film, the electronic structure of a 2D VHS is investigated with angle-resolved photoemission spectroscopy and transport properties are controlled. By applying electric fields with alkali metal deposition and ionic-liquid gating methods, the 2D VHS and the sign of the charge carrier are precisely controlled. Use of a tunable 2D VHS in an atomically flat oxide film could serve as a new strategy to realize infinite DOS near the Fermi level, thereby allowing efficient tuning of electric properties.

摘要

各向异性的态密度(DOS)能诱导出一些特殊的现象,比如超导性的显著增强和意想不到的相变。此外,范霍夫奇点(VHS)会导致二维系统中 DOS 的发散。尽管最近人们对 VHS 很感兴趣,但到目前为止,只有少数可控的情况被报道。在这项工作中,通过使用原子级超薄的 SrRuO 薄膜,利用角分辨光电子能谱研究了二维 VHS 的电子结构,并控制了输运性质。通过使用碱金属沉积和离子液体门控方法施加电场,可以精确控制二维 VHS 和载流子的符号。在原子级平坦的氧化物薄膜中使用可调谐的二维 VHS 可以作为实现费米能级附近无限 DOS 的一种新策略,从而可以有效地调节电性能。

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