基于介质调制埋入式源极水平双栅隧道场效应晶体管的生物传感器研究

Study of Dielectric-Modulated Buried Source Horizontally Double-Gate TFET-Based Biosensors.

作者信息

Yang Jin, Ding Cheng, Cui Guowei, Xu Huifang, Peng Yong, Wang Haibo, Fan Min, Gong Dapeng

机构信息

School of Electronic Information and Integrated Circuits, Hefei Normal University, Hefei 230601, P. R. China.

Institute of Electrical and Electronic Engineering, Anhui Science and Technology University, Feng-yang, Anhui 233100, P. R. China.

出版信息

ACS Omega. 2025 Jul 25;10(30):32939-32945. doi: 10.1021/acsomega.5c02005. eCollection 2025 Aug 5.

DOI:10.1021/acsomega.5c02005

PMID:40787409

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12332688/

Abstract

In this paper, a dielectric-modulated buried source horizontally double-gate TFET-based (DM-BSHDG TFET) biosensors is proposed for detection of biomolecules. The channel partially encloses the buried source, and the drain half surrounds the channel. Horizontally double gate is located above the source and channel. The performance of the DM-BDSTG TFET-based biosensors was evaluated by two-dimensional simulation of TCAD (ATLAS). Biomolecules can be distinguished due to the dielectric constants of different biomolecules placed in the cavity and will lead to different transfer characteristics of the device. The results show that the drain current sensitivity can reach 1.41 × 10 when the gate-source voltage is 2 V. In addition, the subthreshold swing sensitivity can reach 0.9. Therefore, the DM-BSHDG TFET-based biosensors can provide excellent detection and recognition capabilities.

摘要

本文提出了一种基于介质调制埋入源水平双栅隧道场效应晶体管（DM-BSHDG TFET）的生物传感器用于生物分子检测。沟道部分包围埋入源，漏极一半环绕沟道。水平双栅位于源极和沟道上方。基于DM-BDSTG TFET的生物传感器性能通过TCAD（ATLAS）二维模拟进行评估。由于置于腔内的不同生物分子的介电常数不同，生物分子能够被区分，这将导致器件具有不同的转移特性。结果表明，当栅源电压为2 V时，漏极电流灵敏度可达1.41×10，此外，亚阈值摆幅灵敏度可达0.9。因此，基于DM-BSHDG TFET的生物传感器可提供出色的检测和识别能力。