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单片45度偏转镜作为基于AlInGaN半导体实现激光二极管二维阵列的关键元件。

Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors.

作者信息

Saba Kiran, Kafar Anna, Kacperski Jacek, Gibasiewicz Krzysztof, Schiavon Dario, Oto Takao, Grzanka Szymon, Perlin Piotr

机构信息

Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland.

TopGaN Limited, 01-142 Warsaw, Poland.

出版信息

Micromachines (Basel). 2023 Jan 31;14(2):352. doi: 10.3390/mi14020352.

DOI:10.3390/mi14020352
PMID:36838052
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9965166/
Abstract

In this study, we propose a solution for realization of surface emitting, 2D array of visible light laser diodes based on AlInGaN semiconductors. The presented system consists of a horizontal cavity lasing section adjoined with beam deflecting section in the form of 45° inclined planes. They are placed in the close vicinity of etched vertical cavity mirrors that are fabricated by Reactive Ion Beam Etching. The principle of operation of this device is confirmed experimentally; however, we observed an unexpected angular distribution of reflected rays for the angles lower than 45°, which we associate with the light diffraction and interference between the vertical and deflecting mirrors. The presented solution offers the maturity of edge-emitting laser technology combined with versatility of surface-emitting lasers, including on-wafer testing of emitters and addressability of single light sources.

摘要

在本研究中，我们提出了一种基于AlInGaN半导体实现表面发射可见光激光二极管二维阵列的解决方案。所提出的系统由一个水平腔激射部分和一个呈45°倾斜平面形式的光束偏转部分相连组成。它们放置在通过反应离子束蚀刻制造的蚀刻垂直腔镜的紧邻处。该器件的工作原理已通过实验得到证实；然而，我们观察到对于小于45°的角度，反射光线存在意外的角分布，我们将其与垂直镜和偏转镜之间的光衍射和干涉联系起来。所提出的解决方案兼具边缘发射激光技术的成熟性和表面发射激光器的多功能性，包括发射器的晶圆上测试和单个光源的可寻址性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/416069701eae/micromachines-14-00352-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/22377b99ac94/micromachines-14-00352-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/01f769ba29ad/micromachines-14-00352-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/36ceb5731223/micromachines-14-00352-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/ebddb0897e6b/micromachines-14-00352-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/366625c82eb3/micromachines-14-00352-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/2040c6da9728/micromachines-14-00352-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/a4fcf1dd53c9/micromachines-14-00352-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/63822f61f273/micromachines-14-00352-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/8882b9cd55ab/micromachines-14-00352-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/c5dd0113e189/micromachines-14-00352-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/e223ee7a1080/micromachines-14-00352-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/83808a4e91da/micromachines-14-00352-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/9ee575facfa6/micromachines-14-00352-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/416069701eae/micromachines-14-00352-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/22377b99ac94/micromachines-14-00352-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/01f769ba29ad/micromachines-14-00352-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/36ceb5731223/micromachines-14-00352-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/ebddb0897e6b/micromachines-14-00352-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/366625c82eb3/micromachines-14-00352-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/2040c6da9728/micromachines-14-00352-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/a4fcf1dd53c9/micromachines-14-00352-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/63822f61f273/micromachines-14-00352-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/8882b9cd55ab/micromachines-14-00352-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/c5dd0113e189/micromachines-14-00352-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/e223ee7a1080/micromachines-14-00352-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/83808a4e91da/micromachines-14-00352-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/9ee575facfa6/micromachines-14-00352-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2780/9965166/416069701eae/micromachines-14-00352-g014.jpg

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本文引用的文献

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InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications.用于光子集成电路应用的带蚀刻面的氮化铟镓激光二极管。
Micromachines (Basel). 2023 Feb 9;14(2):408. doi: 10.3390/mi14020408.
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Challenges and Advancement of Blue III-Nitride Vertical-Cavity Surface-Emitting Lasers.蓝光III族氮化物垂直腔面发射激光器的挑战与进展
Micromachines (Basel). 2021 Jun 9;12(6):676. doi: 10.3390/mi12060676.
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Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes.揭示侧壁取向在基于氮化镓的紫外发光二极管湿法化学蚀刻中的作用。
Nanomaterials (Basel). 2019 Mar 5;9(3):365. doi: 10.3390/nano9030365.
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450-nm GaN laser diode enables high-speed visible light communication with 9-Gbps QAM-OFDM.450纳米氮化镓激光二极管实现了高达9 Gbps的QAM-OFDM高速可见光通信。
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