Gao Maolin, Yang Jing, Jia Wei, Zhao Degang, Zhai Guangmei, Dong Hailiang, Xu Bingshe
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China.
Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030002, China.
Nanomaterials (Basel). 2024 Apr 8;14(7):649. doi: 10.3390/nano14070649.
The injection and leakage of charge carriers have a significant impact on the optoelectronic performance of GaN-based lasers. In order to improve the limitation of the laser on charge carriers, a slope-shape hole-barrier layer (HBL) and electron-barrier layer (EBL) structure are proposed for near-UV (NUV) GaN-based lasers. We used Crosslight LASTIP for the simulation and theoretical analysis of the energy bands of HBL and EBL. Our simulations suggest that the energy bands of slope-shape HBL and EBL structures are modulated, which could effectively suppress carrier leakage, improve carrier injection efficiency, increase stimulated radiation recombination rate in quantum wells, reduce the threshold current, improve optical field distribution, and, ultimately, improve laser output power. Therefore, using slope-shape HBL and EBL structures can achieve the superior electrical and optical performance of lasers.
载流子的注入和泄漏对基于氮化镓的激光器的光电性能有重大影响。为了改善激光器对载流子的限制，针对近紫外（NUV）基于氮化镓的激光器，提出了一种倾斜形状的空穴阻挡层（HBL）和电子阻挡层（EBL）结构。我们使用Crosslight LASTIP对HBL和EBL的能带进行了模拟和理论分析。我们的模拟表明，倾斜形状的HBL和EBL结构的能带受到调制，这可以有效抑制载流子泄漏，提高载流子注入效率，增加量子阱中的受激辐射复合率，降低阈值电流，改善光场分布，并最终提高激光输出功率。因此，使用倾斜形状的HBL和EBL结构可以实现激光器优异的电学和光学性能。
