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通过有机-无机界面策略控制光开关的互变异构来调节二维逻辑存储器件。

Controlling Isomerization of Photoswitches to Modulate 2D Logic-in-Memory Devices by Organic-Inorganic Interfacial Strategy.

机构信息

School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.

School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.

出版信息

Adv Sci (Weinh). 2023 May;10(13):e2207443. doi: 10.1002/advs.202207443. Epub 2023 Mar 11.

Abstract

Logic-in-memory devices are a promising and powerful approach to realize data processing and storage driven by electrical bias. Here, an innovative strategy is reported to achieve the multistage photomodulation of 2D logic-in-memory devices, which is realized by controlling the photoisomerization of donor-acceptor Stenhouse adducts (DASAs) on the surface of graphene. Alkyl chains with various carbon spacer lengths (n = 1, 5, 11, and 17) are introduced onto DASAs to optimize the organic-inorganic interfaces: 1) Prolonging the carbon spacers weakens the intermolecular aggregation and promotes isomerization in the solid state. 2) Too long alkyl chains induce crystallization on the surface and hinder the photoisomerization. Density functional theory calculation indicates that the photoisomerization of DASAs on the graphene surface is thermodynamically promoted by increasing the carbon spacer lengths. The 2D logic-in-memory devices are fabricated by assembling DASAs onto the surface. Green light irradiation increases the drain-source current (I ) of the devices, while heat triggers a reversed transfer. The multistage photomodulation is achieved by well-controlling the irradiation time and intensity. The strategy based on the dynamic control of 2D electronics by light integrates molecular programmability into the next generation of nanoelectronics.

摘要

基于电偏压实现数据处理和存储的忆阻逻辑器件是一种很有前途和强大的方法。在这里,我们报告了一种创新策略,通过控制在石墨烯表面的给体-受体 Stenhouse 加合物(DASAs)的光异构化来实现二维忆阻逻辑器件的多阶段光调制。通过在 DASAs 上引入具有不同碳间隔长度(n=1、5、11 和 17)的烷基链来优化有机-无机界面:1)延长碳间隔会削弱分子间的聚集并促进固态异构化;2)过长的烷基链会在表面上诱导结晶并阻碍光异构化。密度泛函理论计算表明,通过增加碳间隔长度,石墨烯表面上 DASAs 的光异构化在热力学上得到促进。通过将 DASAs 组装到表面上,制造了二维忆阻逻辑器件。绿光照射会增加器件的源漏电流(I),而热量会触发反向转移。通过精确控制照射时间和强度,可以实现多阶段光调制。这种基于光对二维电子动态控制的策略将分子可编程性集成到下一代纳米电子学中。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0017/10161064/0b52a1b3e6b1/ADVS-10-2207443-g006.jpg

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