Zhang Li, Wei Zhenhua, Wang Xiuxiu, Zhang Luoyu, Wang Yi, Xie Chao, Han Tao, Li Feng, Luo Wei, Zhao Dongxu, Long Mingsheng, Shan Lei
Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
College of Science, National University of Defense Technology, Changsha 410073, China.
ACS Appl Mater Interfaces. 2023 Mar 13. doi: 10.1021/acsami.2c20546.
Broad-bandgap semiconductor-based solar-blind ultraviolet (SBUV) photodetectors have attracted considerable research interest because of their broad applications in missile plume tracking, flame detectors, environmental monitoring, and optical communications due to their solar-blind nature and high sensitivity with low background radiation. Owing to its high light absorption coefficient, abundance, and wide tunable bandgap of 2-2.6 eV, tin disulfide (SnS) has emerged as one of the most promising compounds for application in UV-visible optoelectronic devices. However, SnS UV detectors have some undesirable properties such as slow response speed, high current noise level, and low specific detectivity. This study reports a metal mirror-enhanced TaWSe/SnS (TWS) van der Waals heterodiode-based SBUV photodetector with an ultrahigh photoresponsivity () of ∼1.85 × 10 AW and a fast speed with rising time (τ) of 3.3 μs and decay time (τ) of 3.4 μs. Notably, the TWS heterodiode device exhibits a significantly low noise equivalent power of ∼1.02 × 10 W Hz and a high specific detectivity of ∼3.65 × 10 cm Hz W. This study provides an alternative method for designing fast-speed SBUV photodetectors with enormous potential in applications.
基于宽带隙半导体的日盲紫外（SBUV）光电探测器因其日盲特性以及在低背景辐射下具有高灵敏度，在导弹羽流跟踪、火焰探测器、环境监测和光通信等领域有着广泛应用，因而吸引了大量研究兴趣。由于二硫化锡（SnS）具有高吸光系数、储量丰富以及2 - 2.6 eV的宽可调带隙，它已成为在紫外 - 可见光光电器件中应用最具潜力的化合物之一。然而，SnS紫外探测器存在一些不理想的特性，如响应速度慢、电流噪声水平高和比探测率低。本研究报道了一种基于金属镜增强的TaWSe/SnS（TWS）范德华异质结二极管的SBUV光电探测器，其具有约1.85×10 AW的超高光响应度（），上升时间（τ）为3.3 μs，衰减时间（τ）为3.4 μs，速度快。值得注意的是，TWS异质结二极管器件表现出极低的噪声等效功率，约为1.02×10 W Hz，以及约3.65×10 cm Hz W的高比探测率。本研究为设计在应用中具有巨大潜力的高速SBUV光电探测器提供了一种替代方法。
