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基于深度神经网络的主动容错深部脑刺激器治疗癫痫

Active fault tolerant deep brain stimulator for epilepsy using deep neural network.

机构信息

Department of Instrumentation Engineering, MIT Campus, Anna University, Tamilnadu, Chennai, India.

出版信息

Biomed Tech (Berl). 2023 Mar 16;68(4):373-392. doi: 10.1515/bmt-2021-0302. Print 2023 Aug 28.

Abstract

Millions of people around the world are affected by different kinds of epileptic seizures. A deep brain stimulator is now claimed to be one of the most promising tools to control severe epileptic seizures. The present study proposes Hodgkin-Huxley (HH) model-based Active Fault Tolerant Deep Brain Stimulator (AFTDBS) for brain neurons to suppress epileptic seizures against ion channel conductance variations using a Deep Neural Network (DNN). The AFTDBS contains the following three modules: (i) Detection of epileptic seizures using black box classifiers such as Support Vector Machine (SVM) and K-Nearest Neighbor (KNN), (ii) Prediction of ion channels conductance variations using Long Short-Term Memory (LSTM), and (iii) Development of Reconfigurable Deep Brain Stimulator (RDBS) to control epileptic spikes using Proportional Integral (PI) Controller and Model Predictive Controller (MPC). Initially, the synthetic data were collected from the HH model by varying ion channel conductance. Then, the seizure was classified into four groups namely, normal and epileptic due to variations in sodium ion-channel conductance, potassium ion-channel conductance, and both sodium and potassium ion-channel conductance. In the present work, current controlled deep brain stimulators were designed for epileptic suppression. Finally, the closed-loop performances and stability of the proposed control schemes were analyzed. The simulation results demonstrated the efficacy of the proposed DNN-based AFTDBS.

摘要

全世界有数百万的人受到各种癫痫发作的影响。深部脑刺激器现在被认为是控制严重癫痫发作的最有前途的工具之一。本研究提出了基于 Hodgkin-Huxley(HH)模型的主动容错深部脑刺激器(AFTDBS),用于使用深度神经网络(DNN)抑制脑神经元的癫痫发作,以抵抗离子通道电导变化。AFTDBS 包含以下三个模块:(i)使用黑盒分类器(如支持向量机(SVM)和 K-最近邻(KNN))检测癫痫发作,(ii)使用长短期记忆(LSTM)预测离子通道电导变化,以及(iii)开发可重构深部脑刺激器(RDBS),使用比例积分(PI)控制器和模型预测控制器(MPC)控制癫痫发作。最初,从 HH 模型中通过改变离子通道电导来收集合成数据。然后,将癫痫发作分为四组,即正常和由于钠离子通道电导、钾离子通道电导以及钠离子和钾离子通道电导变化引起的癫痫。在本工作中,设计了电流控制的深部脑刺激器用于癫痫抑制。最后,分析了所提出的控制方案的闭环性能和稳定性。仿真结果证明了基于 DNN 的 AFTDBS 的有效性。

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