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多原子阴离子在三维半导体和导电基底上的软着陆。

Soft landing of polyatomic anions onto three-dimensional semiconductive and conductive substrates.

作者信息

Gholipour-Ranjbar Habib, Hu Hang, Su Pei, Samayoa Oviedo Hugo Yuset, Gilpin Christopher, Wang Haomin, Zhang Yingying, Laskin Julia

机构信息

Department of Chemistry, Purdue University West Lafayette IN 47906 USA

Life Science Microscopy Facility, Purdue University West Lafayette IN 47907 USA.

出版信息

Nanoscale Adv. 2023 Feb 16;5(6):1672-1680. doi: 10.1039/d2na00632d. eCollection 2023 Mar 14.

DOI:10.1039/d2na00632d
PMID:36926574
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10012853/
Abstract

Soft landing of well-characterized polyoxometalate anions, PWO (WPOM) and PMoO (MoPOM), was carried out to explore the distribution of anions in the semiconducting 10 and 6 μm-long vertically aligned TiO nanotubes as well as 300 μm-long conductive vertically aligned carbon nanotubes (VACNTs). The distribution of soft-landed anions on the surfaces and their penetration into the nanotubes were studied using energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM). We observe that soft landed anions generate microaggregates on the TiO nanotubes and only reside in the top 1.5 μm of the nanotube height. Meanwhile, soft landed anions are uniformly distributed on top of VACNTs and penetrate into the top 40 μm of the sample. We propose that both the aggregation and limited penetration of POM anions into TiO nanotubes is attributed to the lower conductivity of this substrate as compared to VACNTs. This study provides first insights into the controlled modification of three dimensional (3D) semiconductive and conductive interfaces using soft landing of mass-selected polyatomic ions, which is of interest to the rational design of 3D interfaces for electronics and energy applications.

摘要

对表征良好的多金属氧酸盐阴离子PWO(WPOM)和PMoO(MoPOM)进行了软着陆,以探索阴离子在10微米和6微米长的垂直排列的TiO纳米管以及300微米长的导电垂直排列的碳纳米管(VACNTs)中的分布。使用能量色散X射线光谱(EDX)和扫描电子显微镜(SEM)研究了软着陆阴离子在表面的分布及其向纳米管中的渗透情况。我们观察到,软着陆阴离子在TiO纳米管上产生微聚集体,并且仅存在于纳米管高度的顶部1.5微米处。同时,软着陆阴离子均匀分布在VACNTs顶部并渗透到样品顶部40微米处。我们认为,与VACNTs相比,POM阴离子在TiO纳米管中的聚集和有限渗透是由于该基底的导电性较低所致。这项研究首次深入了解了使用质量选择的多原子离子软着陆对三维(3D)半导体和导电界面进行的可控修饰,这对于电子和能源应用中3D界面的合理设计具有重要意义。

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