Nwanno Chinaza E, Thapa Arun, Watt John, Simkins Bendayan Daniel, Li Wenzhi
Department of Physics, Florida International University, Miami, FL 33199, USA.
Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
Nanomaterials (Basel). 2024 Jun 6;14(11):988. doi: 10.3390/nano14110988.
Copper-filled vertically aligned carbon nanotubes (Cu@VACNTs) were grown directly on Cu foil substrates of 0.1 mm thicknesses at different temperatures via plasma-enhanced chemical vapor deposition (PECVD). By circumventing the need for additional catalyst layers or intensive substrate treatments, our in-situ technique offers a simplified and potentially scalable route for fabricating Cu@VACNTs with enhanced electrical and thermal properties on thin Cu foils. Comprehensive analysis using field emission scanning microscopy (FESEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) mappings, and X-ray diffraction (XRD) revealed uniform Cu filling within the VACNTs across a range of synthesis temperatures (650 °C, 700 °C, and 760 °C). Field emission (FE) measurements of the sample synthesized at 700 °C (S700) showed low turn-on and threshold fields of 2.33 V/μm and 3.29 V/μm, respectively. The findings demonstrate the viability of thin Cu substrates in creating dense and highly conductive Cu-filled VACNT arrays for advanced electronic and nanoelectronics applications.
通过等离子体增强化学气相沉积（PECVD），在不同温度下于0.1毫米厚的铜箔基板上直接生长了铜填充的垂直排列碳纳米管（Cu@VACNTs）。通过避免对额外催化剂层的需求或密集的基板处理，我们的原位技术为在薄铜箔上制造具有增强电学和热学性能的Cu@VACNTs提供了一种简化且可能可扩展的途径。使用场发射扫描显微镜（FESEM）、透射电子显微镜（TEM）、能量色散X射线光谱（EDS）映射和X射线衍射（XRD）进行的综合分析表明，在一系列合成温度（650°C、700°C和760°C）下，VACNTs内的铜填充均匀。对在700°C合成的样品（S700）进行的场发射（FE）测量显示，其开启场和阈值场分别低至2.33 V/μm和3.29 V/μm。这些发现证明了薄铜基板在为先进电子和纳米电子应用创建密集且高导电的铜填充VACNT阵列方面的可行性。
Zotero 插件
